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科研机构
半导体研究所 [66]
内容类型
期刊论文 [54]
会议论文 [12]
发表日期
2016 [1]
2012 [1]
2011 [5]
2010 [10]
2009 [3]
2008 [4]
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学科主题
半导体材料 [66]
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Large-Size 2D β-Cu2 S Nanosheets with Giant Phase Transition Temperature Lowering (120 K) Synthesized by a Novel Method of Super-Cooling Chemical-Vapor-Deposition
期刊论文
Adv. Mater., 2016, 卷号: 28, 页码: 8271–8276
Bo Li
;
Le Huang
;
Guangyao Zhao
;
Zhongming Wei
;
Huanli Dong
;
Wenping Hu
;
Lin-Wang Wang
;
Jingbo Li
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  |  
浏览/下载:19/0
  |  
提交时间:2017/03/10
Investigation of cavity mode and excitonic transition in an InGaAs/GaAs/AlGaAs vertical-cavity surface emitting laser structure by variable-temperature micro-photoluminescence, reflectance and photomodulated reflectance
期刊论文
journal of physics: conference series, 2012, 卷号: 400, 期号: part 1, 页码: 012088
Yu, J.L
;
Chen, Y.H
;
Jiang, C.Y
;
Zhang, H.Y
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  |  
浏览/下载:14/0
  |  
提交时间:2013/05/13
Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL
;
Chen YH
;
Jiang CY
;
Liu Y
;
Ma H
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  |  
浏览/下载:36/4
  |  
提交时间:2011/07/05
MOLECULAR-BEAM EPITAXY
INVERSION ASYMMETRY
HETEROSTRUCTURES
SEGREGATION
INTERFACE
Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: 463
Li, TF
;
Chen, YH
;
Lei, W
;
Zhou, XL
;
Luo, S
;
Hu, YZ
;
Wang, LJ
;
Yang, T
;
Wang, ZG
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  |  
浏览/下载:18/0
  |  
提交时间:2012/02/06
RAMAN-SCATTERING
SEMICONDUCTING NANOWIRES
OPTOELECTRONIC DEVICES
PHOSPHIDE NANOWIRES
OPTICAL PHONONS
SILICON
CRYSTALS
SPECTRA
Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.84345
Kong JX
;
Zhu QS
;
Xu B
;
Wang ZG
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  |  
浏览/下载:39/3
  |  
提交时间:2011/07/05
The effects of substrate temperature on the properties of diphasic nanocrystalline silicon thin films
期刊论文
optoelectronics and advanced materials-rapid communications, 2011, 卷号: 5, 期号: 40545, 页码: 112-115
Hao HY
;
Xing J
;
Li WM
;
Zeng XB
;
Kong GL
;
Liao XB
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  |  
浏览/下载:81/3
  |  
提交时间:2011/07/06
Nanocrystalline silicon thin films
Structure
Photoelectrical properties
Stability
MICROCRYSTALLINE SILICON
TRANSITION FILMS
SOLAR-CELLS
HYDROGEN
Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition
期刊论文
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者:
Li GK
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浏览/下载:74/2
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提交时间:2011/07/05
vanadium dioxide
infrared transition
diffraction effect
dual ion beam sputtering
annealing
Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 mu m Operating at Room Temperature
期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038501
Kong N (Kong Ning)
;
Liu JQ (Liu Jun-Qi)
;
Li L (Li Lu)
;
Liu FQ (Liu Feng-Qi)
;
Wang LJ (Wang Li-Jun)
;
Wang ZG (Wang Zhan-Guo)
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  |  
浏览/下载:195/33
  |  
提交时间:2010/04/22
WELL INFRARED PHOTODETECTORS
LASER
Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density
期刊论文
journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102
Zhou XL (Zhou X. L.)
;
Chen YH (Chen Y. H.)
;
Jia CH (Jia C. H.)
;
Ye XL (Ye X. L.)
;
Xu B (Xu Bo)
;
Wang ZG (Wang Z. G.)
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  |  
浏览/下载:18/0
  |  
提交时间:2010/12/12
DEPENDENCE
SPECTRA
Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers
期刊论文
thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Hao RT (Hao Ruiting)
;
Deng SK (Deng Shukang)
;
Shen LX (Shen Lanxian)
;
Yang PZ (Yang Peizhi)
;
Tu JL (Tu Jielei)
;
Liao H (Liao Hua)
;
Xu YQ (Xu Yingqiang)
;
Niu ZC (Niu Zhichuan)
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  |  
浏览/下载:41/0
  |  
提交时间:2010/12/28
Gallium Arsenide
Gallium antimonide
Gallium antimonide/Aluminum antimonide
Superlattices
Molecular Beam Epitaxy
VAPOR-PHASE EPITAXY
SURFACE-MORPHOLOGY
GROWTH
SUPERLATTICES
TEMPERATURE
RELAXATION
DETECTORS
GAAS(001)
MOCVD
FILMS
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