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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Tensile and compressive mechanical behavior of twinned silicon carbide nanowires 期刊论文 acta materialia, 2010, 卷号: 58, 期号: 6, 页码: 1963-1971 作者:  Li JB 收藏  |  浏览/下载：63/1  |  提交时间：2010/04/22 Twinning  Nanotructures  Fracture  Buckling  Molecular dynamics  CHEMICAL-VAPOR-DEPOSITION  AB-INITIO CALCULATIONS  BETA-SIC NANOWIRES  LOW-TEMPERATURE  THIN-FILMS  SIMULATION  ELASTICITY  NANOTUBES  POLYTYPES  GROWTH   Light and annealing induced changes in Si-H bonds in undoped a-Si : H 期刊论文 solid state communications, 2000, 卷号: 116, 期号: 9, 页码: 519-524 Sheng SR; Kong GL; Liao XB 收藏  |  浏览/下载：61/0  |  提交时间：2010/08/12 amorphous silicon  semiconductors  infrared absorption  HYDROGENATED AMORPHOUS-SILICON  MODEL  METASTABILITY  SOAKING   First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2) 会议论文 2nd international conference on radiation effects on semiconductor materials, detectors and devices, florence, italy, mar 04-06, 1998 Li Z; Dezilllie B; Eremin V; Li CJ; Verbitskaya E 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 strip detectors  silicon detectors  annealing  simulation  irradiation  N-EFF  JUNCTION DETECTORS  RADIATION-DAMAGE  MODELS   First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2) 期刊论文 nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1999, 卷号: 426, 期号: 1, 页码: 38-46 Li Z; Dezilllie B; Eremin V; Li CJ; Verbitskaya E 收藏  |  浏览/下载：26/0  |  提交时间：2010/08/12 strip detectors  silicon detectors  annealing  simulation  irradiation  JUNCTION DETECTORS  RADIATION-DAMAGE  MODELS  N-EFF   Negative differential resistance and the transition to current self-oscillation in GaAs/AlAs superlattices 期刊论文 solid state communications, 1999, 卷号: 112, 期号: 7, 页码: 371-374 Wang JN; Sun BQ; Wang XR; Wang HL 收藏  |  浏览/下载：97/0  |  提交时间：2010/08/12 semiconductors  tunneling  ELECTRIC-FIELD DOMAINS  DOPED SEMICONDUCTOR SUPERLATTICES  MODEL  INSTABILITIES  DIODES  GAAS-ALAS SUPERLATTICES   ENERGY-LEVEL CALCULATIONS OF THE RECONSTRUCTED 90-DEGREES PARTIAL DISLOCATION IN SILICON 期刊论文 solid state communications, 1992, 卷号: 82, 期号: 2, 页码: 137-140 MARKLUND S; WANG YL 收藏  |  浏览/下载：6/0  |  提交时间：2010/11/15 CORE STRUCTURE  STATES  MODEL