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科研机构
半导体研究所 [34]
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期刊论文 [24]
会议论文 [10]
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2016 [1]
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半导体材料 [34]
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Spectroscopic evidence of different segregation lengths of indium atoms at the direct and inverted interfaces in GaAs/AlGaAs quantum wells
期刊论文
physica e: low-dimensional systems and nanostructures, 2016, 卷号: 81, 页码: 240-247
Jinling Yuabd
;
Shuying Chengbd
;
Yunfeng Laib
;
Qiao Zhengb
;
Yonghai Chenc
;
Jun Rena
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2017/03/10
Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL
;
Chen YH
;
Jiang CY
;
Liu Y
;
Ma H
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  |  
浏览/下载:36/4
  |  
提交时间:2011/07/05
MOLECULAR-BEAM EPITAXY
INVERSION ASYMMETRY
HETEROSTRUCTURES
SEGREGATION
INTERFACE
Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method
期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 7, 页码: 1723-1727
Zhao H
;
Wang SM
;
Zhao QX
;
Sadeghi M
;
Larsson A
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  |  
浏览/下载:180/35
  |  
提交时间:2010/03/08
Quantum well
Dilute nitride
Rapid thermal annealing
InGaAs
GaInNAs
Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:
Xu B
;
Jin P
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  |  
浏览/下载:37/0
  |  
提交时间:2010/03/09
INAS
Temperature dependence of surface quantum dots grown under frequent growth interruption
期刊论文
physica e-low-dimensional systems & nanostructures, 2008, 卷号: 40, 期号: 3, 页码: 503-506
Yu, LK
;
Xu, B
;
Wang, ZG
;
Jin, P
;
Zhao, C
;
Lei, W
;
Sun, J
;
Hu, LJ
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  |  
浏览/下载:24/1
  |  
提交时间:2010/03/08
growth interruption
in segregation
photoluminescence
molecular beam epitaxy
quantum dots
Magnetic coupling properties of mn-doped ZnO nanowires: First-principles calculations
期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 7, 页码: art. no. 073903
Shi, H
;
Duan, Y
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  |  
浏览/下载:44/2
  |  
提交时间:2010/03/08
HIGH CURIE-TEMPERATURE
SPINODAL-DECOMPOSITION
ROOM-TEMPERATURE
1ST PRINCIPLES
THIN-FILMS
SEMICONDUCTORS
FERROMAGNETISM
STABILIZATION
GROWTH
PHASE
XPS depth profiling study of n/TCO interfaces for p-i-n amorphous silicon solar cells
期刊论文
applied surface science, 2006, 卷号: 253, 期号: 3, 页码: 1677-1682
Sheng SR (Sheng Shuran)
;
Hao HY (Hao Huiying)
;
Diao HW (Diao Hongwei)
;
Zeng XB (Zeng Xiangbo)
;
Xu Y (Xu Ying)
;
Liao XB (Liao Xianbo)
;
Monchesky TL (Monchesky Theodore L.)
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  |  
浏览/下载:54/0
  |  
提交时间:2010/03/29
amorphous silicon
Investigation of Mn-doped Si films prepared by magnetron cosputtering
期刊论文
journal of crystal growth, 2006, 卷号: 291, 期号: 1, 页码: 239-242
作者:
Yin ZG
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  |  
浏览/下载:46/0
  |  
提交时间:2010/04/11
Mn doping
magnetron sputtering
MnxSi1-x
diluted magnetic
THIN-FILMS
SPIN-PHOTONICS
SEMICONDUCTORS
GROWTH
FERROMAGNETISM
SPINTRONICS
Evolution of wetting layer in InAs/GaAs quantum dot system
期刊论文
nanoscale research letters, 2006, 卷号: 1, 期号: 1, 页码: 79-83
Chen YH (Chen Y. H.)
;
Ye XL (Ye X. L.)
;
Wang ZG (Wang Z. G.)
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  |  
浏览/下载:59/0
  |  
提交时间:2010/04/11
quantum dots
wetting layer
reflectance difference spectroscopy
segregation
Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy
期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 9, 页码: 2207-2211
作者:
Jin P
;
Ye XL
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  |  
浏览/下载:49/0
  |  
提交时间:2010/04/11
SCANNING-TUNNELING-MICROSCOPY
ANISOTROPY SPECTROSCOPY
GROWTH
GAAS
SURFACES
ALAS
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