QQ客服 官方微博 反馈留言

浏览/检索结果: 共4条，第1-4条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Advances in G-stack diode laser using macro-channel water cooling and high thermal conductivity material packaging 会议论文 Virtual, Online, United states, 2021-03-06 作者:  Han, Yang;  Sun, Lichen;  Fu, Tuanwei;  Gao, Lijun;  Zheng, Yanfang 收藏  |  浏览/下载：31/0  |  提交时间：2021/06/28 G-Stack Diode Laser  Macro-Channel  High Thermal Conductivity Material  Continuous Wave Mode  Low Thermal Resistance   Research on microcracks avoidance in processing of alpha-Al2O3 by ultrashort laser pulses 会议论文 conference on pacific rim laser damage - optical materials for high power lasers 作者:  Wang, Cheng-Wei;  Zhao, Quan-Zhong 收藏  |  浏览/下载：11/0  |  提交时间：2016/11/28 等离子喷涂纳米氧化锆涂层性能的初步研究 会议论文 第八届国际热喷涂研讨会（ITSS'2005）暨第九届全国热喷涂年会（CNTSC'2005）论文集, 第八届国际热喷涂研讨会（ITSS'2005）暨第九届全国热喷涂年会（CNTSC'2005）, 中国云南丽江, CNKI, 中国表面工程协会热喷涂专业委员会 张冠忠; 毛志强; 伍建华; ZHANG Guan-Zhong; MAO Zhi-Qiang; WU Jian-Hua 收藏  |  浏览/下载：3/0 808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China Wang Y.; Yang Y.; Qin L.; Wang C.; Yao D.; Liu Y.; Wang L. 收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25 808nm high power diode lasers  which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems  have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers  and they could lead to new applications where space  weight and electrical power are critical. High efficiency devices generate less waste heat  which means less strain on the cooling system and more tolerance to thermal conductivity variation  a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s  1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars  we fabricate a 1 3 arrays  the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A  the slope efficiency is 3.37 W/A. 2008 SPIE.