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Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文
12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland
Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W.
收藏  |  浏览/下载:16/0  |  提交时间:2013/03/25
ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover  n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.  
650nm AlGaInP quantum well lasers for the application of DVD 会议论文
spie conference on photonics technology into the 21st century - semiconductors, microstructures, and nanostructures, singapore, singapore, dec 01-03, 1999
Chen LH; Ma XY; Guo L; Ma J; Ding HY; Cao Q; Wang LM; Zhang GZ; Yang YL; Wang GH; Tan MQ
收藏  |  浏览/下载:13/0  |  提交时间:2010/10/29
MOVPE growth of GaN and LED on (111) MgAl2O4 会议论文
2nd international conference on nitride semiconductors (icns 97), tokushima city, japan, oct 27-31, 1997
Duan SK; Teng XG; Wang YT; Li GH; Jiang HX; Han P; Lu DC
收藏  |  浏览/下载:5/0  |  提交时间:2010/11/15
GaN  MgAl2O4  MOVPE  LED  DIODES  
Visible vertical cavity surface emitting laser 会议论文
semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998
Cheng P; Ma XY; Gao JH; Kang XJ; Cao Q; Wang HJ; Luo LP; Zhang CH; Lu XL; Lin SM
收藏  |  浏览/下载:30/0  |  提交时间:2010/10/29
A SUPERJUNCTION SNAPBACK-FREE REVERSE-CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR WITH ANTI-PARALLEL P-I-N DIODE (CPCI-S收录) 会议论文
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)
作者:  Yu, Ji[1];  Jiang, Frank X. C.[1];  Wei, Hang[1];  Lin, Xinnan[1]
收藏  |  浏览/下载:1/0  |  提交时间:2019/04/12


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