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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体器件     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Li, Z (Li, Z.); Li, CJ (Li, C. J.) 收藏  |  浏览/下载：304/15  |  提交时间：2010/03/29 DLTS   Investigation on the N-eff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradations 期刊论文 nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1996, 卷号: 377, 期号: 0, 页码: 265-275 Li Z; Li CJ; Eremin V; Verbitskaya E 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/17 RADIATION-DAMAGE  RESISTIVITY   Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7x10(15)n/cm(2) 期刊论文 ieee transactions on nuclear science, 1996, 卷号: 43, 期号: 3, 页码: 1590-1598 Li Z; Ghislotti G; Kraner HW; Li CJ; Nielsen B; Feick H; Lindstroem G 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/17 RADIATION-DAMAGE  JUNCTION   DEVELOPMENT OF CURRENT-BASED MICROSCOPIC DEFECT ANALYSIS-METHODS AND ASSOCIATED OPTICAL FILLING TECHNIQUES FOR THE INVESTIGATION ON HIGHLY IRRADIATED HIGH-RESISTIVITY SILICON DETECTORS 期刊论文 nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1995, 卷号: 364, 期号: 1, 页码: 108-117 LI CJ; LI Z 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/17 LEVEL TRANSIENT SPECTROSCOPY  NEUTRON  RADIATION  TRAPS