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科研机构
半导体研究所 [8]
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期刊论文 [7]
会议论文 [1]
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2010 [1]
2009 [1]
2006 [1]
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1996 [1]
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半导体材料 [8]
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Electrical bistability and negative differential resistance in diodes based on silver nanoparticle-poly(N-vinylcarbazole) composites
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 9, 页码: art. no. 094320
Tang AW (Tang Aiwei)
;
Qu SC (Qu Shengchun)
;
Hou YB (Hou Yanbing)
;
Teng F (Teng Feng)
;
Tan HR (Tan Hairen)
;
Liu J (Liu Jie)
;
Zhang XW (Zhang Xingwang)
;
Wang YS (Wang Yongsheng)
;
Wang ZG (Wang Zhanguo)
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  |  
浏览/下载:28/0
  |  
提交时间:2010/12/12
THIN-FILM
OPTICAL-PROPERTIES
RAMAN-SCATTERING
MEMORY DEVICES
NANOPARTICLES
NANOCRYSTALS
MOLECULE
CLUSTERS
Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation
期刊论文
japanese journal of applied physics, 2009, 卷号: 48, 期号: 2, 页码: art. no. 021001
作者:
Wei XC
;
Duan RF
;
Ding K
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  |  
浏览/下载:76/19
  |  
提交时间:2010/03/08
LOCALIZATION
SEMICONDUCTORS
EMISSION
BOXES
BAND
Al2O3 : Cr3+ nanotubes synthesized via homogenization precipitation followed by heat treatment
期刊论文
journal of physical chemistry b, 2006, 卷号: 110, 期号: 32, 页码: 15749-15754
Cheng BC (Cheng Baochang)
;
Qu SC (Qu Shengchun)
;
Zhou HY (Zhou Huiying)
;
Wang ZG (Wang Zhanguo)
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  |  
浏览/下载:32/0
  |  
提交时间:2010/04/11
GALLIUM NITRIDE NANOTUBES
SINGLE-CRYSTALLINE
ALUMINA NANOTUBES
ALPHA-AL2O3 NANOWIRES
OXIDE NANOTUBES
ROUTE
FILMS
NANOSTRUCTURES
PHOTOLUMINESCENCE
TEMPERATURE
Void formation and failure in InGaN/AlGaN double heterostructures
期刊论文
journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 404-412
作者:
Han PD
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  |  
浏览/下载:206/2
  |  
提交时间:2010/08/12
defects
metalorganic vapor phase epitaxy
nitrides
semiconducting III-V materials
light emitting diodes
LIGHT-EMITTING-DIODES
MULTIPLE-QUANTUM WELLS
THREADING EDGE DISLOCATION
VAPOR-PHASE EPITAXY
N-TYPE GAN
GALLIUM NITRIDE
GROWTH STOICHIOMETRY
SCATTERING
DEFECTS
LUMINESCENCE
Growth and photoluminescence of InAlGaN films
会议论文
5th international conference on nitride semiconductors (icns-5), nara, japan, may 25-30, 2003
作者:
Li DB
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  |  
浏览/下载:13/2
  |  
提交时间:2010/10/29
MULTIPLE-QUANTUM WELLS
QUATERNARY ALLOYS
OPTICAL-PROPERTIES
Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate
期刊论文
journal of crystal growth, 2003, 卷号: 249, 期号: 1-2, 页码: 72-77
作者:
Li DB
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  |  
浏览/下载:55/0
  |  
提交时间:2010/08/12
nanostructures
stretched exponential
time-resolved photolummescence
metalorganic vapor phase epitaxy
nitrides
InAlGaN
INXALYGA1-X-YN QUATERNARY ALLOYS
TIME-RESOLVED PHOTOLUMINESCENCE
MULTIPLE-QUANTUM WELLS
ALINGAN/GAN HETEROSTRUCTURES
GAN
DECAY
LUMINESCENCE
SAPPHIRE
DEVICES
SILICON
New observation on the formation of PbS clusters in zeolite-Y
期刊论文
applied physics letters, 1996, 卷号: 68, 期号: 14, 页码: 1990-1992
Chen W
;
Wang ZG
;
Lin ZJ
;
Qian JJ
;
Lin LY
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/17
OPTICAL-PROPERTIES
SEMICONDUCTOR PARTICLES
CDS SUPERCLUSTERS
ELECTRON-TRANSFER
PHOTOLUMINESCENCE
PHOTOCHEMISTRY
COLLOIDS
SULFIDE
METAL
PHOTOEMISSION-STUDY OF THE INTERFACIAL FORMATION PROCESS AND REACTIONS BETWEEN AL AND HYDROGENATED AMORPHOUS SI
期刊论文
surface science, 1991, 卷号: 243, 期号: 0, 页码: l41-l45
ZHONG ZT
;
WANG DW
;
LIAO XB
;
MOU SM
;
FAN Y
;
LI CF
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  |  
浏览/下载:18/0
  |  
提交时间:2010/11/15
FILMS
MICROSTRUCTURE
SI(111)
SILICON
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