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Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres 期刊论文
japanese journal of applied physics, 2012, 卷号: 51, 期号: 2，part 1, 页码: 20204
Zhang, YY; Li, J; Wei, TB; Liu, J; Yi, XY; Wang, GH; Yi, FT
收藏  |  浏览/下载：9/0  |  提交时间：2013/03/17
Strong up-conversion emissions in ZnO:Er3+, ZnO:Er3+-Yb3+ nanoparticles and their surface modified counterparts 期刊论文
journal of colloid and interface science, 2011, 卷号: 358, 期号: 2, 页码: 334-337
作者:  Li JB
收藏  |  浏览/下载：54/5  |  提交时间：2011/07/05
Study on Optical Properties of Type-II SnO2/ZnS Core/Shell Nanowires 期刊论文
journal of physical chemistry c, 2011, 卷号: 115, 期号: 15, 页码: 7225-7229
作者:  Li JB
收藏  |  浏览/下载：37/2  |  提交时间：2011/07/05
Spin injection in the multiple quantum-well LED structure with the Fe/AlO (x) injector 期刊论文
science china-physics mechanics & astronomy, 2010, 卷号: 53, 期号: 4, 页码: 649-653
Wu H (Wu Hao); Zheng HZ (Zheng HouZhi); Liu J (Liu Jian); Li GR (Li GuiRong); Xu P (Xu Ping); Zhu H (Zhu Hui); Zhang H (Zhang Hao); Zhao JH (Zhao JianHua)
收藏  |  浏览/下载：81/2  |  提交时间：2010/05/04
Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 8, 页码: art. no. 087802
Ruan J; Yu TJ; Jia CY; Tao RC; Wang ZG; Zhang GY
收藏  |  浏览/下载：87/2  |  提交时间：2010/03/08
Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods 期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 2, 页码: art. no. 026102
作者:  Jiang DS;  Zhang SM;  Yang H;  Yang H;  Wang YT
收藏  |  浏览/下载：58/0  |  提交时间：2010/03/08
Organic light-emitting diodes with magnesium doped CuPc as an efficient electron injection layer 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 2, 页码: 719-721
Cao JS; Guan M; Cao GH; Zeng YP; Li JM; Qin DS
收藏  |  浏览/下载：91/4  |  提交时间：2010/03/08
Sixfold symmetry of excitonic transition energies in c-plane for wurtzite GaN 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 15, 页码: art. no. 151111
作者:  Hao GD
收藏  |  浏览/下载：59/0  |  提交时间：2010/03/08
Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 102112
Ma, P; Gai, YQ; Wang, JX; Yang, FH; Zeng, YP; Li, JM; Li, JB
收藏  |  浏览/下载：24/0  |  提交时间：2010/03/08
Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition 期刊论文
japanese journal of applied physics, 2008, 卷号: 47, 期号: 9, 页码: 7026-7031 part 1
Zhong, L; Ma, XY
收藏  |  浏览/下载：55/0  |  提交时间：2010/03/08

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