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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Fabrication of high-hole-mobility germanium-on-insulator wafers through an easy method 期刊论文 Journal of Alloys and Compounds, 2018, 卷号: 750, 页码: 182-188 作者:  Kai Yu ;   Fan Yang ;   Hui Cong ;   Lin Zhou ;   Qingyun Liu ;   Lichun Zhang ;   Buwen Cheng ;   Chunlai Xue ;   Yuhua Zuo ;   Chuanbo Li 收藏  |  浏览/下载：32/0  |  提交时间：2019/11/19 Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As 期刊论文 ieee international conference on group iv photonics gfp, 2011, 页码: 314-316 Hu, Weixuan; Cheng, Buwen; Xue, Chunlai; Su, Shaojian; Liu, Zhi; Li, Yaming; Wang, Qiming 收藏  |  浏览/下载：49/0  |  提交时间：2012/06/13 Epitaxial growth  Germanium  Indium  Photonics  Semiconducting silicon compounds  Silicon   Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique 期刊论文 guangdianzi jiguang/journal of optoelectronics laser, 2011, 卷号: 22, 期号: 7, 页码: 1030-1033 Zhou, Zhi-Wen; He, Jing-Kai; Li, Cheng; Yu, Jin-Zhong 收藏  |  浏览/下载：46/0  |  提交时间：2012/06/13 Atomic force microscopy  Atomic spectroscopy  Chemical vapor deposition  Diffraction  Epitaxial growth  Germanium  Raman spectroscopy  Semiconducting silicon compounds  Substrates  Surface morphology  Ultrahigh vacuum  X ray diffraction   Photon detection and emission of epitaxial Ge on Si with potential applications in microwave photonic filters 期刊论文 2011 ieee international topical meeting on microwave photonics- jointly held with the2011 asia-pacific microwave photonics conference, mwp/apmp2011, 2011, 页码: 101-104 Ding, L.; Lim, Andy Eu-Jin; Fang, Qing; Liow, Tsung-Yang; Yu, M.B.; Lo, G.-Q. 收藏  |  浏览/下载：31/0  |  提交时间：2012/06/14 Detectors  Electroluminescence  Epitaxial growth  Germanium  Light  Light emission  Light sources  Microwave filters  Microwaves  Monolithic integrated circuits  Optical frequency conversion  Photodetectors  Photoluminescence  Photonics  Photons  Semiconducting silicon compounds  Silicon   Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser 期刊论文 journal of applied physics, 2010, 卷号: 107, 期号: 7, 页码: art. no. 073108 Zhu YH (Zhu Yuan-Hui); Xu Q (Xu Qiang); Fan WJ (Fan Wei-Jun); Wang JW (Wang Jian-Wei) 收藏  |  浏览/下载：67/3  |  提交时间：2010/05/07 ALLOYS  GE   Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy 期刊论文 journal of crystal growth, 1998, 卷号: 193, 期号: 4, 页码: 535-540 Liu JP; Kong MY; Li JP; Liu XF; Huang DD; Sun DZ 收藏  |  浏览/下载：33/0  |  提交时间：2010/08/12 Si1-xGex alloys  low temperature epitaxy  desorption  adsorption  surface morphology  growth kinetics  HYDROGEN DESORPTION  SI(100)  SI  SURFACTANT  GERMANIUM  MECHANISM  KINETICS  ALLOYS  SI2H6  GAS-SOURCE MBE