×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [18]
内容类型
期刊论文 [16]
会议论文 [2]
发表日期
2011 [2]
2010 [4]
2009 [6]
2008 [1]
2006 [2]
2001 [1]
更多...
学科主题
光电子学 [18]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共18条,第1-10条
帮助
限定条件
学科主题:光电子学
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
发表日期升序
发表日期降序
提交时间升序
提交时间降序
题名升序
题名降序
作者升序
作者降序
Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k center dot p model
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.30507
Yu X
;
Gu YX
;
Wang Q
;
Wei X
;
Chen LH
收藏
  |  
浏览/下载:65/4
  |  
提交时间:2011/07/06
type-II 'W' quantum well
Burt-Foreman Hamiltonian
finite element methods
LASERS
ALLOYS
The optimization of large gap-midgap ratio photonic crystal with improved Bisection-Particle Swarm Optimization
期刊论文
optics communications, 2011, 卷号: 284, 期号: 1, 页码: 226-230
作者:
Jiang B
收藏
  |  
浏览/下载:49/3
  |  
提交时间:2011/07/06
Particle Swarm Optimization
Bisection-Particle Swarm Optimization
Gap-midgap ratio
BAND-GAP
EMISSION
DEFECT
Optically controlled quantum dot gated transistors with high on/off ratio
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 8, 页码: art. no. 083503
Yang XH (Yang Xiaohong)
;
Xu XL (Xu Xiulai)
;
Wang XP (Wang Xiuping)
;
Ni HQ (Ni Haiqiao)
;
Han Q (Han Qin)
;
Niu ZC (Niu Zhichuan)
;
Williams DA (Williams David A.)
收藏
  |  
浏览/下载:68/2
  |  
提交时间:2010/04/22
III-V semiconductors
indium compounds
laser beam applications
nanoelectronics
photoelectric devices
photoelectricity
phototransistors
semiconductor quantum dots
I-N JUNCTIONS
Optical properties of InN rods on sapphire grown by metal-organic chemical vapor deposition
期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 138-141
作者:
Zhang SM
收藏
  |  
浏览/下载:58/1
  |  
提交时间:2011/07/05
BAND-GAP
INDIUM NITRIDE
TRANSPORT
EMISSION
Design of novel polarization beam splitter in two-dimensional photonic crystal
期刊论文
acta physica sinica, 2010, 卷号: 59, 期号: 8, 页码: 5547-5552
Guo H (Guo Hao)
;
Wu P (Wu Ping)
;
Yu TB (Yu Tian-Bao)
;
Liao QH (Liao Qing-Hua)
;
Liu NH (Liu Nian-Hua)
;
Huang YZ (Huang Yong-Zhen)
收藏
  |  
浏览/下载:59/1
  |  
提交时间:2010/09/07
polarization beam splitter
band structure
plane wave expansion
finite difference time domain
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties
期刊论文
physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672
Wang H (Wang H.)
;
Jiang DS (Jiang D. S.)
;
Jahn U (Jahn U.)
;
Zhu JJ (Zhu J. J.)
;
Zhao DG (Zhao D. G.)
;
Liu ZS (Liu Z. S.)
;
Zhang SM (Zhang S. M.)
;
Qiu YX (Qiu Y. X.)
;
Yang H (Yang H.)
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/12/12
InGaN
Dislocation
Metalorganic chemical vapor deposition
High resolution X-ray diffraction
Cathodoluminescence
MISFIT DISLOCATIONS
QUANTUM-WELLS
BAND-GAP
EPILAYERS
GENERATION
ALLOYS
INN
Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition
期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 14, 页码: art. no. 145410
作者:
Zhang SM
;
Yang H
;
Yang H
;
Wang YT
;
Zhu JJ
收藏
  |  
浏览/下载:72/0
  |  
提交时间:2010/03/08
MOLECULAR-BEAM EPITAXY
PHASE EPITAXY
QUANTUM DOTS
BAND-GAP
GROWTH
SURFACES
Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 21, 页码: art. no. 212109
作者:
Li JB
收藏
  |  
浏览/下载:112/0
  |  
提交时间:2010/03/08
ab initio calculations
band structure
cadmium compounds
III-V semiconductors
II-VI semiconductors
IV-VI semiconductors
zinc compounds
First-principles investigation of the electronic structure and magnetism of eskolaite
期刊论文
chinese physics b, 2009, 卷号: 18, 期号: 6, 页码: 2551-2556
Xue Hai-Yun
;
Xue Chun-Lai
;
Cheng Bu-Wen
;
Yu Yu-De
;
Wang Qi-Ming
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/23
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD
期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者:
Yang H
;
Jiang DS
;
Zhao DG
;
Zhang SM
;
Yang H
收藏
  |  
浏览/下载:88/41
  |  
提交时间:2010/03/08
MOLECULAR-BEAM EPITAXY
ELECTRON-TRANSPORT
BAND-GAP
FILMS
SAPPHIRE
©版权所有 ©2017 CSpace - Powered by
CSpace