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科研机构
半导体研究所 [33]
内容类型
期刊论文 [31]
会议论文 [2]
发表日期
2011 [1]
2010 [2]
2009 [1]
2007 [3]
2006 [6]
2004 [1]
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学科主题
半导体材料 [33]
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Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL
;
Chen YH
;
Jiang CY
;
Liu Y
;
Ma H
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浏览/下载:36/4
  |  
提交时间:2011/07/05
MOLECULAR-BEAM EPITAXY
INVERSION ASYMMETRY
HETEROSTRUCTURES
SEGREGATION
INTERFACE
Surface roughness scattering in two dimensional electron gas channel
期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262111
Liu B
;
Lu YW
;
Jin GR
;
Zhao Y
;
Wang XL
;
Zhu QS
;
Wang ZG
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  |  
浏览/下载:48/5
  |  
提交时间:2011/07/05
MOLECULAR-BEAM EPITAXY
MOBILITY ALGAN/GAN HETEROSTRUCTURES
RAY PHOTOEMISSION SPECTROSCOPY
PERFORMANCE
ALN
MODFETS
INN
Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers
期刊论文
thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Hao RT (Hao Ruiting)
;
Deng SK (Deng Shukang)
;
Shen LX (Shen Lanxian)
;
Yang PZ (Yang Peizhi)
;
Tu JL (Tu Jielei)
;
Liao H (Liao Hua)
;
Xu YQ (Xu Yingqiang)
;
Niu ZC (Niu Zhichuan)
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  |  
浏览/下载:41/0
  |  
提交时间:2010/12/28
Gallium Arsenide
Gallium antimonide
Gallium antimonide/Aluminum antimonide
Superlattices
Molecular Beam Epitaxy
VAPOR-PHASE EPITAXY
SURFACE-MORPHOLOGY
GROWTH
SUPERLATTICES
TEMPERATURE
RELAXATION
DETECTORS
GAAS(001)
MOCVD
FILMS
Depolarization blueshift in intersubband transitions of triangular quantum wires
期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: art. no. 113712
作者:
Song HP
;
Zhang B
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  |  
浏览/下载:31/0
  |  
提交时间:2010/04/04
aluminium compounds
effective mass
gallium arsenide
III-V semiconductors
SCF calculations
semiconductor quantum wires
spectral line shift
EXCHANGE INTERACTION
ENERGY
STATES
ABSORPTION
NANOWIRES
ELECTRONS
SUBBANDS
WELLS
FIELD
Synthesis and characterization of ZnO nanorods and nanoflowers grown on GaN-based LED epiwafer using a solution deposition method
期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 12, 页码: 3654-3659
Gao HY (Gao Haiyong)
;
Yan FW (Yan Fawang)
;
Li JM (Li Jinmin)
;
Zeng YP (Zeng Yiping)
;
Wang JX (Wang Junxi)
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  |  
浏览/下载:79/0
  |  
提交时间:2010/03/29
CHEMICAL-VAPOR-DEPOSITION
Improved field emission properties from metal-coated diamond films
期刊论文
diamond and related materials, 2007, 卷号: 16, 期号: 3, 页码: 650-653
Zhao YM (Zhao Yongmei)
;
Zhang BL (Zhang Binglin)
;
Yao N (Yao Ning)
;
Sun GS (Sun Guosheng)
;
Li JM (Li Jinmin)
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  |  
浏览/下载:39/0
  |  
提交时间:2010/03/29
MWPCVD diamond films
Evolution of InAs/GaAs(001) islands during the two- to three-dimensional growth mode transition in molecular-beam epitaxy
期刊论文
nanotechnology, 2007, 卷号: 18, 期号: 16, 页码: art.no.165301
Wu, J (Wu, J.)
;
Jin, P (Jin, P.)
;
Jiao, YH (Jiao, Y. H.)
;
Lv, XJ (Lv, X. J.)
;
Wang, ZG (Wang, Z. G.)
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  |  
浏览/下载:28/0
  |  
提交时间:2010/03/29
ASSEMBLED QUANTUM DOTS
Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition
期刊论文
thin solid films, 2006, 卷号: 497, 期号: 1-2, 页码: 157-162
Ai B
;
Shen H
;
Liang ZC
;
Chen Z
;
Kong GL
;
Liao XB
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2010/04/11
chemical vapour deposition
electrical properties and measurements
scanning electron microscopy
polycrystalline silicon
GRAIN-BOUNDARIES
STATES
Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate
期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 337-340
Zhou HY
;
Qu SC
;
Wang ZG
;
Liang LY
;
Cheng BC
;
Liu JP
;
Peng WQ
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2010/04/11
anodic alumina films
Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate
会议论文
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Zhou HY
;
Qu SC
;
Wang ZG
;
Liang LY
;
Cheng BC
;
Liu JP
;
Peng WQ
收藏
  |  
浏览/下载:132/26
  |  
提交时间:2010/03/29
anodic alumina films
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