中国开放科研知识云: 检索

High power Bragg reflection waveguide diode lasers with twin near-circular emission spots (EI CONFERENCE) 会议论文
2012 IEEE Photonics Society Summer Topical Meeting Series, PSST 2012, July 9, 2012 - July 11, 2012, Seattle, WA, United states
Tong C.; Wang L.; Yang Y.; Zeng Y.; Wang L.

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A novel semiconductor laser with two symmetrical near-circular emission spots separated at an angle of 62 was demonstrated using Bragg reflection waveguide. The low beam divergence of 5.4 and power of 2.6 W were achieved. 2012 IEEE.

Rearrangeable nonblocking 88 matrix optical switches based on extended banyan network (EI CONFERENCE) 会议论文
Zha Y.; Sun D.-G.; Liu T.; Zhang Y.; Li X.; Jiang J.

收藏 | 浏览/下载：16/0 | 提交时间：2013/03/25

Based on the CROSSBAR network (CN) and the BANYAN network (BN) 8 matrix optical switch two new rearrangeable nonblocking constructions of extended BANYAN network (EBN) are proposed for implementing 88 optical matrix switch. The interconnection characteristics of these two types of rearrangeable nonblocking EBN were studied optical insertion loss of 4.6 dB and the logic program for driving switching units was provided. The calculated insertion loss was 3.3 dB for 88 optical matrix switch. Silica waveguide 88 matrix optical switch was designed and fabricated according to the calculated results. The silica waveguide propagation loss of 0.1 dB/cm and waveguide-fiber coupling loss of 0.5dB/point were measured. With the fabricated 87times cross-talk of -38 dB polarization dependent loss of 0.4 dB averaged switching power of 1.6 W and switching time of 1 ms were achieved. A basic agreement between experimental results and theoretical calculated values was achieved.

808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
Wang Y.; Yang Y.; Qin L.; Wang C.; Yao D.; Liu Y.; Wang L.

收藏 | 浏览/下载：15/0 | 提交时间：2013/03/25

808nm high power diode lasers which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers and they could lead to new applications where space weight and electrical power are critical. High efficiency devices generate less waste heat which means less strain on the cooling system and more tolerance to thermal conductivity variation a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s 1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars we fabricate a 1 3 arrays the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A the slope efficiency is 3.37 W/A. 2008 SPIE.

Large aperture low threshold current 980nmVCSELs fabricated with pulsed anodic oxidation (EI CONFERENCE) 会议论文
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
Jinjiang C.; Yongqiang N.; Te L.; Guangyu L.; Yan Z.; Biao P.; Yanfang S.; Lijun W.

收藏 | 浏览/下载：19/0 | 提交时间：2013/03/25

Pulsed anodic oxidation technique a new way of forming current blocking layers was successfully used in ridge-waveguide QW laser fabrication. We apply this method in 980nm VCSELs fabrication to form a high-quality native oxide current blocking layer which simplify the device process. A significant reduction of threshold current and a distinguished device performance are achieved. The 500m-diameter device has a current threshold as low as 0.48W. The maximum CW operation output power at room temperature is 1.48W. The lateral divergence angle //and vertical divergence angle are as low as 15.3 and 13.8 without side-lobes at a current of 6A.

Fabrication of vertical coupled polymer microring resonator (EI CONFERENCE) 会议论文
ICO20: Optical Communication, August 21, 2005 - August 26, 2005, Changshun, China
Deng W.; Shulin E.; Sun D.; Wang P.; Zhang D.; Xu W.

收藏 | 浏览/下载：14/0 | 提交时间：2013/03/25

In this paper a new fabricating strategy for polymer microring resonators vertically coupled to a bus waveguide is developed. A carefully engineered Al masking process is utilized to compensate the local concave of the buried waveguide formed by polymer spin-coating realizing perfectly flat top surface of the buried bus waveguide. A serial of the vertically coupled polymer microring resonator showing excellent topology was fabricated with this strategy. The resonance phenomenon is oberved in a PMMA-based microring resonators using this fabricating strategy. The suggested approach is suitable to fabricate vertically coupled polymer micro-resonators.

Low drive-voltage and high-bandwidth electro-optic modulators based on BaTiO3 thin-film waveguides (EI CONFERENCE) 会议论文
Science and Technology of Dielectrics for Active and Passive Photonic Devices - 210th Electrochemical Society Meeting, October 29, 2006 - November 3, 2006, Cancun, Mexico
Sun D. G.; Fu X. H.; Liu Z. F.; Ho S. T.; Wessels B. W.

收藏 | 浏览/下载：31/0 | 提交时间：2013/03/25

We investigated electro-optic modulator structures to target low drive voltage high-speed modulation and small device size with c-axis grown BaTiO3/MgO ferro-electric thin films. In this study the calculations are focused on the ideal thin film with a quadratic relation between the half-wave drive voltage V and the interaction length L in the electro-optic modulation case we obtained in previous work. With the quadratic electro-optic modulating relation and the optimal rib waveguide structure of BaTiO3/MgO thin films the frequency-voltage-size performances for 2.5GHz 10GHz 40GHz and 100GHz modulation bandwidths have been obtained under half-wave drive voltages of 0.8V 1.6V 3.0V and 4.8V respectively for the ideal film with r51=730 pm/V at 1550nm wavelength where both the phase velocity matching condition and the conductor induced microwave attenuation are considered. The required device lengths to achieve these four typical values of modulation bandwidth are 3.3 mm 0.8 mm 0.4 mm and 0.2 mm respectively. With the c-axis grown BaTiO3/MgO crystal thin films and the quadratic electro-optic modulating relation an electro-optic coefficient of reff=180 pm/V for the c-axis grown BaTiO3/MgO ferro-electric thin films was measured which is relatively far from the ideal value of r51=560 pm/V. copyright The Electrochemical Society.

Fabrication of 3232 polymer arrayed waveguide gratings using remelting technique (EI CONFERENCE) 会议论文
ICO20: Optical Communication, August 21, 2005 - August 26, 2005, Changshun, China
Zhang D.; Wang F.; Zhang X.; Deng W.; Shulin E.

收藏 | 浏览/下载：14/0 | 提交时间：2013/03/25

A 32 32 arrayed waveguide grating (AWG) multiplexer operating around the 1550 nm wavelength has been designed and fabricated using fluorinated poly (ether ether ketone). The schematic layout is about 3.21.7 cm 2. For our AWG the total loss of designed AWG multiplexer is calculated to be 4.5 dB. We fabricated the AWG multiplexer by spin coating photolithographic patterning and reactive ion etching (RIE). The core size is 55 m2. The roughness of polymer surface was reduced by 20 nm using a remelting technique. The measured wavelength channel spacing of the fabricated AWG multiplexer is 0.796 nm and center wavelength is 1548 nm. The inserting loss of the AWG is 9.5 dB and crosstalk less than -20 dB.

Rearrangeable nonblocking 88 matrix optical switch based on silica waveguides and extended banyan network (EI CONFERENCE) 会议论文
Science and Technology of Dielectrics for Active and Passive Photonic Devices - 210th Electrochemical Society Meeting, October 29, 2006 - November 3, 2006, Cancun, Mexico
Sun D. G.; Zha Y.; Zhang Y.; Li X. Q.; Deng W. Y.; Fu X. H.

收藏 | 浏览/下载：15/0 | 提交时间：2013/03/25

Based on the CROSSBAR network (CN) and the BANYAN network (BN) two new rearrangeable nonblocking constructions of extended BANYAN network (EBN) were proposed for implementing 88 optical matrix switch. The interconnection characteristics of these two types of rearrangeable nonblocking EBN were studied and the driver logic program of switching units was provided. The calculated insertion loss is 3.3 dB for 88 optical matrix switch. Silica waveguide 88 matrix optical switch was designed and fabricated according to the calculated results. The silica waveguide propagation loss of 0.1 dB/cm and waveguide-fiber coupling loss of 0.5dB/point were measured out. With the fabricated 88 matrix optical switch optical insertion loss of 4.6 dB cross-talk of -38 dB polarization dependent loss of 0.4 dB averaged switching power of 1.6 W and switching time of 1 ms were achieved. A basic agreement between experimental results and theoretical calculated values was achieved. copyright The Electrochemical Society.

Using one-dimensional nonlinear photonic crystal for dynamical addressing optical interconnection (EI CONFERENCE) 会议论文
ICO20: Optical Information Processing, August 21, 2005 - August 26, 2005, Changchun, China
Chen M.; Li C.; Xu M.; Wang W.; Ma S.; Xia Y.; Chen S.; Liu D.

收藏 | 浏览/下载：22/0 | 提交时间：2013/03/25

Optical interconnection is the key technique of high-speed optical information process and optical communication. A lot of approaches for optical interconnection have been proposed since Goodman in Stanford University firstly proposed the optical interconnection for very large scale integrated circuits technology. A dynamical addressing device for optical interconnection was designed and fabricated in this paper. This optical device is based on one-dimensional nonlinear photonic crystal made on the planar waveguide. The nonlinear materials ZnS and ZnSe which have large nonlinear refractive index coefficients were alternately deposited on the waveguide to form one-dimensional photonic crystal. The Bragg condition is changed when the input power of the control light increased due to the nonlinear characters of the materials thus the reflective angle of the signal light can be changed with the input power change of the control light. In our experiment when increasing the power density of control light from 0 to 2.60X105W/cm 2 the angle of the signal beam can be changed about 20. The interconnection characteristics were investigated in theory and in experiment. The testing data agree well with theoretical predictions. This kind of devices is promising to use in the all-optical interconnection optical information processing and optical communication.

Packaging technology of polymer/Si arrayed waveguide grating and their environmental stability (EI CONFERENCE) 会议论文
2005 6th International Conference on Electronics Packaging Technology, August 30, 2005 - September 2, 2005, Dameisha, Shenzhen, China
Zhang D.; Wang F.; Zhang Y.; Zhang X.; Deng W.; Shulin E.

收藏 | 浏览/下载：26/0 | 提交时间：2013/03/25

Future optical communication systems will use more of the exceptional high bandwidth of optical fiber. Wavelength division multiplexing (WDM) systems are well suited to transport terabits of information via the fiber[1]. Multiplexers/ demultiplexers (MUX/DEMUX) are essential components for dense WDM systems. Several different kinds of multiplexer types have been developed in the past: (a) interference filters (b) fiber gratings and (c) planar lightwave circuit (PLC) MUX/DEMUXers[2 3]. The planar fabrication process of the last mentioned PLCs allows the realization of high performance filters with a large number of wavelength channels. Further an integration with other optical elements seems to be possible. Arrayed waveguide gratings (AWG) are a special kind of PLC-MUX/DEMUXers which are very attractive components for WDM systems because of their great flexibility in filter design[4 5]. Basically an AWG is an optical spectrograph built in planar waveguide technique. Typically AWGs works in a high grating order (50-250). For AWG multiplexer applications in communications systems a precise wavelength controllability and wavelength stability with long term is demanded. Recently a polymeric (especially fluorinated polymer with low optical absorption loss in the infrared region) AWG has attracted much attention because of its easy fabrication low cost possibility and a potential of integration with other polymer devices[6]. Standard AWGs however show a change of center wavelength with temperature. A method to prevent this temperature drift is to package the AWG together with a temperature controller in order to tune and fix the desired filter-wavelength. In this paper a 32-channel AWG was fabricated using a cross-linkable fluorinated poly (ether ether ketone) (FPEEK) its package technology and environmental stability were also discussed. 2005 IEEE.

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