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CORC

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Photoluminescent Quantum Interference in a van der Waals Magnet Preserved by Symmetry Breaking 期刊论文
ACS NANO, 2020, 卷号: 14, 期号: 1, 页码: 1003-1010
作者:  Pingfan Gu;   Qinghai Tan;   Yi Wan;   Ziling Li;   Yuxuan Peng;   Jiawei Lai;   Junchao Ma;   Xiaohan Yao;   Shiqi Yang;   Kai Yuan;   Dong Sun;   Bo Peng;   Jun Zhang;   Yu Ye*
收藏  |  浏览/下载：59/0  |  提交时间：2021/12/16
Current-induced spin polarization in monolayer InSe 期刊论文
PHYSICAL REVIEW B, 2019, 卷号: 100, 期号: 24, 页码: 245409
作者:  Ma Zhou ;   Shengbin Yu;   Wen Yang;   Wen-kai Lou ;   Fang Cheng;   Dong Zhang;   Kai Chang
收藏  |  浏览/下载：19/0  |  提交时间：2020/07/31
Spin-charge conversion in InSe bilayers 期刊论文
PHYSICAL REVIEW B, 2019, 卷号: 99, 期号: 15, 页码: 155402
作者:  Ma Zhou;   Dong Zhang;   Shengbin Yu;   Zhihan Huang;   Yingda Chen;   Wen Yang;   Kai Chang
收藏  |  浏览/下载：17/0  |  提交时间：2020/07/31
Multiband k • p theory of monolayer XSe (X=In; Ga) 期刊论文
PHYSICAL REVIEW B, 2017, 卷号: 96, 期号: 15, 页码: 155430
作者:  Ma Zhou;  Rui Zhang;  Jiangpeng Sun;  Wen-Kai Lou;  Dong Zhang
收藏  |  浏览/下载：20/0  |  提交时间：2018/06/01
SWCNT-MoS2-SWCNT Vertical Point Heterostructures 期刊论文
Adv. Mater., 2017, 卷号: 29, 页码: 1604469
作者:  Jin Zhang;  Yang Wei;  Fengrui Yao;  Dongqi Li;  He Ma
收藏  |  浏览/下载：30/0  |  提交时间：2018/06/01
Interface effect on structural and optical properties of type II InAs/GaSb superlattices 期刊论文
journal of crystal growth, 2014, 卷号: 407, 页码: 37-41
Huang, Jianliang; Ma, Wenquan; Wei, Yang; Zhang, Yanhua; Cui, Kai; Shao, Jun
收藏  |  浏览/下载：24/0  |  提交时间：2015/03/16
Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy 期刊论文
semiconductor science and technology, 2013, 卷号: 28, 期号: 4, 页码: 045004
Xiaolu Guo, Wenquan Ma, Jianliang Huang, Yanhua Zhang, Yang Wei, Kai Cui, Yulian Cao and Qiong Li
收藏  |  浏览/下载：22/0  |  提交时间：2014/04/09
Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy 期刊论文
semiconductor science and technology, 2013, 卷号: 28, 期号: 4, 页码: 045004
Guo, Xiaolu; Ma, Wenquan; Huang, Jianliang; Zhang, Yanhua; Wei, Yang; Cui, Kai; Cao, Yulian; Li, Qiong
收藏  |  浏览/下载：21/0  |  提交时间：2013/10/08
540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier 期刊论文
ieee electron device letters, 2013, 卷号: 34, 期号: 6, 页码: 759-761
Cui, Kai; Ma, Wenquan; Zhang, Yanhua; Huang, Jianliang; Wei, Yang; Cao, Yulian; Guo, Xiaolu; Li, Qiong
收藏  |  浏览/下载：19/0  |  提交时间：2013/08/27
Narrow-band long-/very-long wavelength two-color type-II InAs/GaSb superlattice photodetector by changing the bias polarity 期刊论文
zhang, yanhua1 ; ma, wenquan1 ; wei, yang1 ; cao, yulian1 ; huang, jianliang1 ; cui, kai1 ; guo, xiaolu1, 2012, 卷号: 100, 期号: 17, 页码: 173511
Zhang, Yanhua; Ma, Wenquan; Wei, Yang; Cao, Yulian; Huang, Jianliang; Cui, Kai; Guo, Xiaolu
收藏  |  浏览/下载：14/0  |  提交时间：2013/04/19

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