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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime 期刊论文 chinese physics b, 2013, 卷号: 22, 期号: 9, 页码: 098801 Yang Jing, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Li Liang, Wu Liang-Liang, Le Ling-Cong, Li Xiao-Jing, He Xiao-Guang, Wang Hui, Zhu Jian-Jun, Zhang Shu-Ming, Zhang Bao-Shun, Yang Huia 收藏  |  浏览/下载：19/0  |  提交时间：2014/04/09 An inp-based dual-depletion-region electroabsorption modulator with low capacitance and predicted high bandwidth 期刊论文 Chinese physics letters, 2011, 卷号: 28, 期号: 11, 页码: 4 作者:  Shao Yong-Bo;  Zhao Ling-Juan;  Yu Hong-Yan;  Qiu Ji-Fang;  Qiu Ying-Ping 收藏  |  浏览/下载：35/0  |  提交时间：2019/05/12 An InP-Based Dual-Depletion-Region Electroabsorption Modulator with Low Capacitance and Predicted High Bandwidth 期刊论文 chinese physics letters, 2011, 卷号: 28, 期号: 11, 页码: 114207 Shao YB (Shao Yong-Bo); Zhao LJ (Zhao Ling-Juan); Yu HY (Yu Hong-Yan); Qiu JF (Qiu Ji-Fang); Qiu YP (Qiu Ying-Ping); Pan JQ (Pan Jiao-Qing); Wang BJ (Wang Bao-Jun); Zhu HL (Zhu Hong-Liang); Wang W (Wang Wei) 收藏  |  浏览/下载：11/0  |  提交时间：2012/02/21 Influence of v/iii ratio on the structural and photoluminescence properties of in0.52alas/in0.53gaas metamorphic high electron mobility transistor grown by molecular beam epitaxy 期刊论文 Chinese physics b, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123 作者:  Gao Hong-Ling;  Zeng Yi-Peng;  Wang Bao-Qiang;  Zhu Zhan-Ping;  Wang Zhan-Guo 收藏  |  浏览/下载：12/0  |  提交时间：2019/05/12 Molecular beam epitaxy  Semiconducting iii-v materials  High electron mobility transistors   Subband electron properties of ingaas/inalas high-electron-mobility transistors with different channel chickness 期刊论文 Acta physica sinica, 2007, 卷号: 56, 期号: 8, 页码: 4955-4959 作者:  Gao Hong-Ling;  Li Dong-Lin;  Zhou Wen-Zheng;  Shang Li-Yan;  Wang Bao-Qiang 收藏  |  浏览/下载：12/0  |  提交时间：2019/05/12 Channel thickness  Two-dimensional electron gas  Shubnikov-de haas oscillations  High electron mobility transistor   Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness 期刊论文 acta physica sinica, 2007, 卷号: 56, 期号: 8, 页码: 4955-4959 Gao, HL (Gao Hong-Ling); Li, DL (Li Dong-Lin); Zhou, WZ (Zhou Wen-Zheng); Shang, LY (Shang Li-Yan); Wang, BQ (Wang Bao-Qiang); Zhu, ZP (Zhu Zhan-Ping); Zeng, YP (Zeng Yi-Ping) 收藏  |  浏览/下载：39/0  |  提交时间：2010/03/29 channel thickness   Growth and annealing study of mg-doped algan and gan/algan superlattices 期刊论文 Chinese physics letters, 2006, 卷号: 23, 期号: 8, 页码: 2187-2189 作者:  Wang Bao-Zhu;  Wang Xiao-Liang;  Hu Guo-Xin;  Ran Jun-Xue;  Wang Xin-Hua 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Growth and annealing study of Mg-doped AlGaN and GaN/AlGaN superlattices 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 8, 页码: 2187-2189 Wang BZ (Wang Bao-Zhu); Wang XL (Wang Xiao-Liang); Hu GX (Hu Guo-Xin); Ran JX (Ran Jun-Xue); Wang XH (Wang Xin-Hua); Guo LC (Guo Lun-Chun); Xiao HL (Xiao Hong-Ling); Li JP (Li Jian-Ping); Zeng YP (Zeng Yi-Ping); Li JM (Li Jin-Min); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：28/0  |  提交时间：2010/04/11 LIGHT-EMITTING-DIODES