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科研机构
新疆理化技术研究所 [13]
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期刊论文 [13]
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2018 [3]
2017 [1]
2016 [1]
2015 [4]
2014 [2]
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Physics [1]
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专题:新疆理化技术研究所
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Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor
期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10
作者:
Zhang, JX (Zhang, Jin-Xin)[ 1 ]
;
Guo, HX (Guo, Hong-Xia)[ 2,3 ]
;
Pan, XY (Pan, Xiao-Yu)[ 3 ]
;
Guo, Q (Guo, Qi)[ 2 ]
;
Zhang, FQ (Zhang, Feng-Qi)[ 3 ]
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2018/11/20
Sige Hbt
Synergistic Effect
Single Event Effects
Total Ionizing Dose
Estimation of low-dose-rate degradation on bipolar linear circuits using different accelerated evaluation methods
期刊论文
ACTA PHYSICA SINICA, 2018, 卷号: 67, 期号: 9, 页码: 202-209
作者:
Li, XL (Li Xiao-Long)[ 1,2,3 ]
;
Lu, W (Lu Wu)[ 1,2 ]
;
Wang, X (Wang Xin)[ 1,2,3 ]
;
Guo, Q (Guo Qi)[ 1,2 ]
;
He, CF (He Cheng-Fa)[ 1,2 ]
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2018/09/27
Bipolar Circuit
Enhanced Low-dose-rate Sensitivity
Accelerated Evaluation Method
Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases
期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 84, 期号: 5, 页码: 105-111
作者:
Zhang, JX (Zhang, Jin-xin)
;
Guo, Q (Guo, Qi)
;
Guo, HX (Guo, Hong-xia)
;
Lu, W (Lu, Wu)
;
He, CH (He, Chao-hui)
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2018/06/20
Eldrs
Sige Hbt
Gamma Irradiation
Bias Conditions
An investigation of ionizing radiation damage in different SiGe processes
期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 8
作者:
Li, P (Li, Pei)
;
Liu, MH (Liu, Mo-Han)
;
He, CH (He, Chao-Hui)
;
Guo, HX (Guo, Hong-Xia)
;
Zhang, JX (Zhang, Jin-Xin)
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2017/12/11
Different Silicon-germanium Process
Ionizing Radiation Damage
Numerical Simulation
Radiation Resistance of Fluorine-Implanted PNP Using Gated-Controlled Lateral PNP Transistor Structure
期刊论文
CHINESE PHYSICS LETTERS, 2016, 卷号: 33, 期号: 8
作者:
Wang, X (Wang, Xin)
;
Lu, W (Lu, Wu)
;
Ma, WY (Ma, Wu-Ying)
;
Guo, Q (Guo, Qi)
;
Wang, ZK (Wang, Zhi-Kuan)
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2016/12/07
mTOR ATP-competitive inhibitor INK128 inhibits neuroblastoma growth via blocking mTORC signaling
期刊论文
APOPTOSIS, 2015, 卷号: 20, 期号: 1, 页码: 50-62
作者:
Zhang, HY (Zhang, Huiyuan)
;
Dou, J (Dou, Jun)
;
Yu, Y (Yu, Yang)
;
Zhao, YL (Zhao, Yanling)
;
Fan, YH (Fan, Yihui)
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2015/03/11
Neuroblastoma
mTOR inhibitor
INK128
Chemotherapy
Drug resistance
Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors
期刊论文
CHINESE PHYSICS LETTERS, 2015, 卷号: 32, 期号: 8
作者:
Li, P (Li Pei)
;
Guo, HX (Guo Hong-Xia)
;
Guo, Q (Guo Qi)
;
Zhang, JX (Zhang Jin-Xin)
;
Wei, Y (Wei Ying)
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2018/01/25
Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment
期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8
作者:
Li, P (Li Pei)
;
Guo, HX (Guo Hong-Xia)
;
Guo, Q (Guo Qi)
;
Zhang, JX (Zhang Jin-Xin)
;
Xiao, Y (Xiao Yao)
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2017/09/14
SiGe heterojunction bipolar transistor
single event effect
three-dimensional numerical simulation
laser microbeam experiment
Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor
期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 11
作者:
Li, P (Li Pei)
;
Guo, HX (Guo Hong-Xia)
;
Guo, Q (Guo Qi)
;
Wen, L (Wen Lin)
;
Cui, JW (Cui Jiang-Wei)
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2015/07/11
SiGe heterojunction bipolar transistor
single event effect
hardening design
dummy collector
Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor
期刊论文
ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 24
作者:
Zhang, JX (Zhang Jin-Xin)
;
He, CH (He Chao-Hui)
;
Guo, HX (Guo Hong-Xia)
;
Tang, D (Tang Du)
;
Xiong, C (Xiong Cen)
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2018/02/01
Sige Heterojunction Bipolar Transistor
Different Bias
Single Event Effect
3d Numerical Simulation
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