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CORC

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Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/ GaN-based high electron mobility transistors 期刊论文
Semiconductor Science and Technology, 2019, 卷号: 34, 期号: 12, 页码: 125006
作者:  Weizhen Yao;  Lianshan Wang;  Fangzheng Li;  Yulin Meng;  Shaoyan Yang ;   Zhanguo Wang
收藏  |  浏览/下载：7/0  |  提交时间：2020/07/30
Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures 期刊论文
Journal of Physics D: Applied Physics, 2018, 卷号: 51, 期号: 34, 页码: 345102
作者:  Huang Huolin;  Sun Zhonghao;  Cao Yaqing;  Li Feiyu;  Zhang Feng;  Wen Zhengxin;  Zhang Zifeng;  Liang Yung C.;  Hu Lizhong
收藏  |  浏览/下载：19/0  |  提交时间：2019/11/15
Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer 期刊论文
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2018, 卷号: 10, 期号: 2, 页码: 185-189
作者:  Meilan Hao ;   Quan Wang ;   Lijuan Jiang ;   Chun Feng ;   Changxi Chen ;   Cuimei Wang ;   Hongling Xiao ;   Fengqi Liu ;   Xiangang Xu ;   Xiaoliang Wang ;   Zhanguo Wang
收藏  |  浏览/下载：34/0  |  提交时间：2019/11/15
GaN high electron mobility transistors with AlInN back barriers 期刊论文
journal of alloys and compounds, 2016, 卷号: 662, 页码: 16-19
X.G. He; D.G. Zhao; D.S. Jiang; J.J. Zhu; P. Chen; Z.S. Liu; L.C. Le; J. Yang; X.J. Li; J.P. Liu; L.Q. Zhang; H. Yang
收藏  |  浏览/下载：13/0  |  提交时间：2017/03/10
Specific detection of mercury(II) irons using AlGaAs/InGaAs high electron mobility transistors 期刊论文
journal of crystal growth, 2015, 卷号: 425, 页码: 381-384
Chengyan Wang; Yang Zhang; Min Guan; Lijie Cui; Kai Ding; Bintian Zhang; Zhang Lin; Feng Huang; Yiping Zeng
收藏  |  浏览/下载：15/0  |  提交时间：2016/03/29
Specific Detection of Alpha-Fetoprotein Using AlGaAs/GaAs High Electron Mobility Transistors 期刊论文
ieee electron device letters, 2014, 卷号: 35, 期号: 3, 页码: 333-335
Ding, K; Wang, CY; Zhang, BT; Zhang, Y; Guan, M; Cui, LJ; Zhang, YW; Zeng, YP; Lin, Z; Huang, F
收藏  |  浏览/下载：19/0  |  提交时间：2015/04/02
Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier 期刊论文
applied physics express, 2013, 卷号: 6, 期号: 5, 页码: 051201
Kong, Xin; Wei, Ke; Liu, Guoguo; Liu, Xinyu; Wang, Cuimei; Wang, Xiaoliang
收藏  |  浏览/下载：11/0  |  提交时间：2013/08/27
Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 11, 页码: 117306
Tan, Ren-Bing; Qin, Hua; Zhang, Xiao-Yu; Xu, Wen
收藏  |  浏览/下载：13/0  |  提交时间：2014/05/16
Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文
solid state communications, 2013, 卷号: 153, 期号: 1, 页码: 53-57
Ji, Dong; Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo
收藏  |  浏览/下载：27/0  |  提交时间：2013/10/10
Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors 期刊论文
applied physics letters, 2013, 卷号: 103, 期号: 23, 页码: 232109
Li, Huijie; Liu, Guipeng; Wei, Hongyuan; Jiao, Chunmei; Wang, Jianxia; Zhang, Heng; Dong Jin, Dong; Feng, Yuxia; Yang, Shaoyan; Wang, Lianshan; Zhu, Qinsheng; Wang, Zhan-Guo
收藏  |  浏览/下载：28/0  |  提交时间：2014/03/17

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