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CORC

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Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD‐Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文
Advanced Electronic Materials, 2018, 卷号: Vol.4 No.4
作者:  Wendong Li;  Shuang Liang;  Li Zhu;  Mao Liu;  Mingliang Tian
收藏  |  浏览/下载：44/0  |  提交时间：2019/04/22
Structure, mechanical and friction behavior of laminar Ti-incorporated Al2O3 thermal control films deposited on polyethylene terephthalate flexible substrates 期刊论文
Vacuum, 2018, 卷号: Vol.154, 页码: 244-249
作者:  Wenchao Shi;  Dongmei Gong;  Feng Xu
收藏  |  浏览/下载：3/0  |  提交时间：2019/04/22
Modulation of electrical properties and current conduction mechanism of HfAlO/Ge gate stack by ALD-derived Al2O3 passivation layer 期刊论文
Journal of Alloys and Compounds, 2017, 卷号: Vol.695, 页码: 1591-1599
作者:  Li,W. D.;  Jin,P.;  Wei,H. H.;  Xiao,X. D.;  Gao,J.
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/22
Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature 期刊论文
Journal of Alloys and Compounds, 2017, 卷号: Vol.691, 页码: 504-513
作者:  Lv,J. G.;  Jin,P.;  Xiao,D. Q.;  Zheng,C. Y.;  Chen,X. S.
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/22
BN/Al2O3/碳纤维填充MVQ导热复合材料的制备 期刊论文
材料科学与工程学报, 2017, 卷号: 第35卷, 页码: 815-819
作者:  张琳琳;  杨斌;  陈鹏;  苗继斌;  程国君
收藏  |  浏览/下载：5/0  |  提交时间：2019/04/17
Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy 期刊论文
Journal of Alloys and Compounds, 2017, 卷号: Vol.716, 页码: 1-6
作者:  Liu,Yanmei;  Sun,Zhaoqi;  Jiang,Shanshan;  Li,Jing;  Liu,Mao
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24
Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks 期刊论文
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2017, 卷号: Vol.33 No.8, 页码: 901-906
作者:  Jiang,Shanshan;  Zhu,Li;  Gao,Juan;  Xiao,Dongqi;  Liang,Shuang
收藏  |  浏览/下载：8/0  |  提交时间：2019/04/24
Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: Vol.667, 页码: 352-358
作者:  Sun,Zhaoqi;  Liu,Mao;  Chen,Hanshuang;  Gao,Juan;  Xiao,Dongqi
收藏  |  浏览/下载：3/0  |  提交时间：2019/04/22
Structural determination of (Al2O3)n (n = 1-15) clusters based on Graphic Processing Unit. 期刊论文
J Chem Inf Model., 2015, 卷号: Vol.55 No.5, 页码: 1012-1020
作者:  Cheng L.;  Zhang Q
收藏  |  浏览/下载：2/0  |  提交时间：2019/04/22
Deposition and Determination of Band Alignment of Al2O3/Si Gate Stacks by New CVD Chemistry 期刊论文
ASIAN JOURNAL OF CHEMISTRY, 2014, 卷号: Vol.26 No.5, 页码: 1563-1564
作者:  Sun,Zhaoqi;  Song,Xueping;  Chen,Xuefei;  He,Gang;  Deng,Bin
收藏  |  浏览/下载：2/0  |  提交时间：2019/04/22

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