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| Crystalline silicon surface passivation investigated by thermal 期刊论文
Chinese Physics B, 2017
作者: Hou CX(侯彩霞); Tao K(陶科); Sun HC(孙恒超); Zhang PF(张鹏飞); Jiang S(姜帅)
  收藏 | 浏览/下载：12/0 | 提交时间：2018/05/16 |
| Highly improved resistive switching performances of the self-doped Pt-HfO2Cu-Cu devices by atomic layer deposition 期刊论文
Science China Physics, Mechanics & Astronomy, 2016
作者: Liu S(刘森); Wang W(王伟); Liu M(刘明)
收藏 | 浏览/下载：9/0 | 提交时间：2017/05/11 |
| Investigation of spatial charge distribution and electrical dipole in atomic layer deposited Al2O3 on 4H-SiC 期刊论文
J Physics D: Applied Physics, 2016
作者: Wang XL(王晓磊)
收藏 | 浏览/下载：7/0 | 提交时间：2017/05/09 |
| O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors 期刊论文
Applied Physics Letters, 2015
作者: Huang S(黄森)
收藏 | 浏览/下载：17/0 | 提交时间：2016/05/26 |
| AlO_x prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell 期刊论文
Chinese Physics B, 2014
作者: Liu BW(刘邦武); Chou HB(仇洪波)
收藏 | 浏览/下载：5/0 | 提交时间：2015/04/22 |
| Influences of high-temperature annealing on atomic layer deposited Al2O3/4H-SiC 期刊论文
chinese physics b, 2013
作者: Bai Y(白云); Wang YJ(王弋军); Shen HJ(申华军)
收藏 | 浏览/下载：7/0 | 提交时间：2014/10/27 |
| Size dependence of biexciton binding energy in single InAs/GaAs quantum dots 外文期刊
2009
作者: Dou, XM; Sun, BQ; Huang, SS; Ni, HQ; Niu, ZC
收藏 | 浏览/下载：9/0 | 提交时间：2010/11/26
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| Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing 外文期刊
2007
作者: Li, ZG; Long, SB; Liu, M; Wang, CS; Jia, R
收藏 | 浏览/下载：15/0 | 提交时间：2010/11/26
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| Fabrication and charging characteristics of MOS capacitor structure with metal nanocrystals embedded in gate oxide 外文期刊
2007
作者: Guan, WH; Long, SB; Liu, M; Li, ZG; Hu, Y
收藏 | 浏览/下载：16/0 | 提交时间：2010/11/26
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