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| Improved Ti germanosilicidation by Ge pre-amorphization implantation (PAI) for advanced contact technologies 期刊论文 Microelectronic Engineering, 2018 作者: Mao SJ(毛淑娟); Wang GL(王桂磊); Xu J(许静); Zhang D(张丹); Luo X(罗雪) 收藏  |  浏览/下载:46/0  |  提交时间:2019/05/05
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| Impact of Ge pre-amorphization implantation on forming ultrathin TiGe x on both n-and p-Ge substrate 期刊论文 Japanese Journal of Applied Physics, 2018 作者: Liu S(刘实); Li JF(李俊峰); Wang WW(王文武); Chen DP(陈大鹏); Zhao C(赵超) 收藏  |  浏览/下载:11/0  |  提交时间:2019/05/20 |
| On the manifestation ofGe Pre-amorphization Implantation (PAI) in forming ultrathin TiSix for Ti direct contact on Si in sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology nodes 期刊论文 ECS Journal of Solid State Science and Technology, 2017 作者: Wang GL(王桂磊); Li JF(李俊峰); Zhao C(赵超); Ye TC(叶甜春); Chen DP(陈大鹏) 收藏  |  浏览/下载:43/0  |  提交时间:2018/06/08 |
| Ultra-shallow junctions formed using microwave annealing 期刊论文 Applied Physics Letters, 2013 作者: Hu S(胡晟); Xu P(许鹏); Fu CC(付超超); Luo J(罗军) 收藏  |  浏览/下载:5/0  |  提交时间:2014/10/30 |
| Mobility enhancement technology for scaling of CMOS devices: Overview and status 期刊论文 Journal of Electron Material, 2011 作者: Song Y(宋毅) 收藏  |  浏览/下载:9/0  |  提交时间:2012/11/16 |
| Finite-element study of strain field in strained-Si MOSFET 外文期刊 2009 作者: Liu, HH; Xu, QX; Duan, XF 收藏  |  浏览/下载:17/0  |  提交时间:2010/11/26
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| Hole mobility enhancement of pMOSFETs with strain channel induced by ge pre-amorphization implantation for source/drain extension 外文期刊 2006 作者: Xu, QX; Duan, XF; Qian, H; Liu, HH; Li, HO 收藏  |  浏览/下载:12/0  |  提交时间:2010/11/26 |