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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 专题：长春光学精密机械与物理研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Combined dual-wavelength laser diode beam end-pumped single longitudinal mode Pr3+:LiYF4 360 nm ultraviolet laser 期刊论文 Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 5 作者:  W.Dou;  S.-S.Pu;  N.Niu;  D.-P.Qu;  X.-J.Meng 收藏  |  浏览/下载：1/0  |  提交时间：2020/08/24 Ultraviolet lasers,Bragg gratings,Digital storage,Etalons,Fabry-Perot interferometers,Lithium alloys,Lithium compounds,MATLAB   锂氮共掺杂p型氧化锌基薄膜制备及其光电器件研究 学位论文 博士: 中国科学院大学, 2015 作者:  卢英杰 收藏  |  浏览/下载：28/0  |  提交时间：2015/11/30 氧化锌  p型掺杂  发光二极管  随机激光   AlGaInP-LED微阵列器件的设计与实验研究 学位论文 博士: 中国科学院大学, 2015 作者:  田超 收藏  |  浏览/下载：42/0  |  提交时间：2015/11/30 AlGaInP  发光二极管  微阵列  微光机电系统  阳极电极   The ultralow driven current ultraviolet-blue light-emitting diode based on n-ZnO nanowires/i-polymer/p-GaN heterojunction 期刊论文 Applied Physics Letters, 2010, 卷号: 97, 期号: 17 Guo Z.; Zhang H.; Zhao D. X.; Liu Y. C.; Yao B.; Li B. H.; Zhang Z. Z.; Shen D. Z. 收藏  |  浏览/下载：17/0  |  提交时间：2012/10/21 Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文 12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W. 收藏  |  浏览/下载：16/0  |  提交时间：2013/03/25 ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover  n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.