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Optoelectronic Performance of 2D WSe2 Field Effect Transistor 期刊论文
Faguang Xuebao/Chinese Journal of Luminescence, 2021, 卷号: 42, 期号: 2, 页码: 257-263
作者:  F.-L. Xia;  K.-X. Shi;  D.-X. Zhao;  Y.-P. Wang;  Y. Fan and J.-H. Li
收藏  |  浏览/下载：2/0  |  提交时间：2022/06/13
Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 793, 页码: 599-603
作者:  X.K.Liu;  K.L.Li;  X.J.Sun;  Z.M.Shi;  Z.H.Huang
收藏  |  浏览/下载：0/0  |  提交时间：2020/08/24
Electronic Devices and Circuits Based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition 期刊论文
Advanced Electronic Materials, 2019, 卷号: 5, 期号: 8, 页码: 10
作者:  L.Wang;  L.Chen;  S.L.Wong;  X.Huang;  W.G.Liao
收藏  |  浏览/下载：0/0  |  提交时间：2020/08/24
Anomalous Broadband Spectrum Photodetection in 2D Rhenium Disulfide Transistor 期刊论文
Advanced Optical Materials, 2019, 卷号: 7, 期号: 23, 页码: 9
作者:  D.Xiang;  T.Liu;  J.Y.Wang;  P.Wang;  L.Wang
收藏  |  浏览/下载：0/0  |  提交时间：2020/08/24
基于场效应晶体管结构的多功能有机光电器件研究 学位论文
中国科学院大学(中国科学院长春光学精密机械与物理研究所): 中国科学院大学(中国科学院长春光学精密机械与物理研究所), 2018
作者:  李东伟
收藏  |  浏览/下载：0/0  |  提交时间：2019/09/23
Molecular gated-AlGaNGaN high electron mobility transistor for pH detection 期刊论文
Analyst, 2018, 卷号: 143, 期号: 12, 页码: 2784-2789
作者:  Ding, X. Z.;  Yang, S.;  Miao, B.;  Gu, L.;  Gu, Z. Q.
收藏  |  浏览/下载：12/0  |  提交时间：2019/09/17
Near-Infrared to Visible Organic Upconversion Devices Based on Organic Light-Emitting Field Effect Transistors 期刊论文
Acs Applied Materials & Interfaces, 2017, 卷号: 9, 期号: 41
作者:  Li, D. W.;  Y. S. Hu;  N. Zhang;  Y. Lv;  J. Lin
收藏  |  浏览/下载：18/0  |  提交时间：2018/06/13
新型场效应晶体管的研究与制备 学位论文
硕士: 中国科学院大学, 2014
端鹏飞
收藏  |  浏览/下载：146/0  |  提交时间：2015/05/03
Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs 期刊论文
Materials Science in Semiconductor Processing, 2014, 期号: 26, 页码: 614-619
Yang H.; Gao J.; Nakashima H.
收藏  |  浏览/下载：11/0  |  提交时间：2015/04/24
Design of an improved data signal timing for an amorphous silicon active-matrix organic LED display (EI CONFERENCE) 会议论文
ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China
Liao Y.-P.; Zhang Z.-W.; Shao X.-B.; Liu J.-E.; Guo-zhu F. U.; Jing H.; Qiu F.-B.; Kai M. A.
收藏  |  浏览/下载：12/0  |  提交时间：2013/03/25
The most critical issue in the design of an active matrix organic light emitting diode (AM-OLED) display pixel is the pixel to the pixel luminance uniformity. By substituting four-thin film transistor (TFT) pixel circuit for two-TFT pixel circuit  the luminous uniformity has great improved  but it requires more components than the two-TFT pixel circuit. There are some barriers needed to resolve to utilize hydrogenated amorphous silicon transistor to lit OLED  such as low field effect mobility  low output current and threshold voltage shift. In this article  a two-a-Si:H TFT pixel circuit was designed  which consisted of one named switching TFT and the other named driving TFT. The driving TFT gate line structure modified and a data signal timing improved were reported. The modified driving TFT can provide enough current about 30 microampere to lit OLED and the novel data signal timing can provide a constant current to OLED by restraining the driving TFT threshold voltage variation. In the novel data signal timing  the control signals to the driving TFT gate include a data signal and a reverse data signal. The signals alteration is performed either at a frame rate or at a line rate. By experiments  the driving TFT output current value is plotted as a function of the time in different reversed voltage value. When the magnitude of the positive data signal and the negative data signal is equal  the variety of Vth  is smallest  about 1.28V after a fixed stressing time of 1.33104min  which shows the novel data signal timing can improved the driving TFT output-input current stability.  

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