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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 专题：北京航空航天大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 An S band tracking receiver LNA for satellite communications 会议论文 2018 IEEE International Workshop on Antenna Technology, iWAT2018 - Proceedings 作者:  Arsalan, M.;  Wu, F. 收藏  |  浏览/下载：12/0  |  提交时间：2019/12/30 Computer software  High electron mobility transistors  Noise figure  Satellite communication systems  Satellites  Tracking (position)  Advanced systems  Frequency ranges  pHEMT  Pseudomorphic high electron mobility transistors  S Band  Satellite communications  Simulations and measurements  Voltage standing wave ratio (VSWR)  Low noise amplifiers   High performance metamaterials-high electron mobility transistors integrated terahertz modulator 期刊论文 OPTICS EXPRESS, 2017, 卷号: 25, 页码: 17832-17840 作者:  Zhou, Zhen;  Wang, Siqi;  Yu, Yue;  Chen, Yongli;  Feng, Lishuang 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/30 Analysis and RHBD technique of single event transients in PLLs 期刊论文 Journal of Semiconductors, 2015, 卷号: 36 作者:  Han, Z.;  Wang, L.;  Yue, S.;  Han, B.;  Du, S. 收藏  |  浏览/下载：9/0  |  提交时间：2019/12/30 Hardening  Hardness  Heavy ions  High electron mobility transistors  Locks (fasteners)  Nanotechnology  Phase locked loops  Radiation effects  Radiation hardening  Reconfigurable hardware  Heavy ion testing  Phase Locked Loop (PLL)  Radiation hardening by design  Radiation hardness  Sensitive components  Single event transients  System levels  Transistor level  Transients   Modeling and simulation of single-event effect in CMOS circuit 期刊论文 Journal of Semiconductors, 2015, 卷号: 36 作者:  Yue, S.;  Zhang, X.;  Zhao, Y.;  Liu, L.;  Wang, H. 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/30 Bipolar semiconductor devices  CMOS integrated circuits  Digital devices  Digital storage  High electron mobility transistors  Integrated circuits  Ionization  Ionizing radiation  Nanotechnology  Radiation hardening  Reconfigurable hardware  Semiconductor devices  Charge collection  Charge sharing effects  Circuit-level simulation  Model and simulation  Multi-nodes  Single event effects  Single event transients  Single event upsets  Transients   1.0 mu m gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition 期刊论文 JOURNAL OF CENTRAL SOUTH UNIVERSITY, 2012, 卷号: 19, 页码: 3444-3448 作者:  Gao Cheng;  Li Hai-ou;  Huang Jiao-ying;  Diao Sheng-long 收藏  |  浏览/下载：7/0  |  提交时间：2020/01/06 metamorphic device  mental organic chemical vapor deposition  high electron mobility transistors  InP substrate  InGaAs