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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 专题：南华大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Analytical Drain Current Model for Amorphous and Polycrystalline Silicon Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States 会议论文 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT), Shenzhen, PEOPLES R CHINA, NOV 16-18, 2018 作者:  He, Hongyu*;  Liu, Yuan;  Yan, Binghui;  Lin, Xinnan;  Zheng, Xueren 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/27 Amorphous silicon  polycrystalline silicon  thin-film transistor  trap states  analytical model   Drain Current Model Based on the Meyer-Neldel Rule for Polycrystalline ZnO Thin-Film Transistors at Different Temperatures 会议论文 24th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Chengdu, PEOPLES R CHINA, JUL 04-07, 2017 作者:  He, Hongyu*;  Liu, Yuan;  Yan, Binghui;  Lin, Xinnan;  Zheng, Xueren 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/27 Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 期号: 9, 页码: 3654-3660 作者:  He, Hongyu*;  Liu, Yuan;  Yan, Binghui;  Lin, Xinnan;  Zheng, Xueren 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/27 Analytical model  drain current  temperature characteristics  thin-film transistor (TFT)  trap states   Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States 期刊论文 IEEE Transactions on Electron Devices, 2017, 卷号: 64, 期号: 9, 页码: 3654-3660 作者:  He, Hongyu*;  Liu, Yuan;  Yan, Binghui;  Lin, Xinnan;  Zheng, Xueren 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/27 Analytical model  drain current  temperature characteristics  thin-film transistor (TFT)  trap states   Analytical Drain Current Model for Organic Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States 期刊论文 IEEE Transactions on Electron Devices, 2016, 卷号: 63, 期号: 11, 页码: 4423-4431 作者:  He, Hongyu*;  Liu, Yuan;  Yan, Binghui;  Lin, Xinnan;  Zheng, Xueren 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/27 Compact model  temperature characteristics  thin-film transistor (TFT)  trap states