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Effects of hydrostatic pressure on the electrical properties of hexagonal Ge2Sb2Te5: Experimental and theoretical approaches 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 14, 页码: 142112
Xu, B; Su, Y; Liu, ZG; Zhang, CH; Xia, YD; Yin, J; Xu, Z; Ren, WC; Xiang, YH
收藏  |  浏览/下载:14/0  |  提交时间:2012/04/10
InP-based InAs/InGaAs quantum wells with type-I emission beyond 3 mu m 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 8, 页码: 81914
Gu, Y; Zhang, YG; Wang, K; Fang, X; Li, C; Cao, YY; Li, AZ; Li, YY
收藏  |  浏览/下载:7/0  |  提交时间:2012/04/10
High performance external cavity InAs/InP quantum dot lasers 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 12, 页码: 121102
Chen, P; Gong, Q; Cao, CF; Li, SG; Wang, Y; Liu, QB; Yue, L; Zhang, YG; Feng, SL(封松林); Ma, CH; Wang, HL
收藏  |  浏览/下载:13/0  |  提交时间:2012/04/10


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