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High current gain In0.49Ga0.51P/GaAs heterojunction bipolar transistors with double spacers grown by gas source molecular beam epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2000, 卷号: 17, 期号: 12, 页码: 915-917
Chen, XJ; Chen, JX; Chen, YQ; Peng, P; Yang, QK; Li, AZ
收藏  |  浏览/下载:8/0  |  提交时间:2012/03/24
Experimental study of InP-based InAlAs/InGaAs quantum well infrared photodetectors operating at the 3-5 mu m wavelength region 期刊论文
CHINESE PHYSICS LETTERS, 1999, 卷号: 16, 期号: 10, 页码: 747-749
Zhang, YG(张永刚); Li, AZ; Chen, JX; Yang, QK; Ren, YC
收藏  |  浏览/下载:7/0  |  提交时间:2012/03/25
Investigation of hole mobility in GaInP/(In)GaAs/GaAs p-type modulation doped heterostructures 期刊论文
CHINESE PHYSICS LETTERS, 1999, 卷号: 16, 期号: 1, 页码: 50-52
Yang, QK; Li, AZ; Chen, JX
收藏  |  浏览/下载:14/0  |  提交时间:2012/03/25


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