CORC

浏览/检索结果: 共3条,第1-3条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Total ionizing dose effects in elementary devices for 180-nm flash technologies 期刊论文
MICROELECTRONICS RELIABILITY, 2011, 卷号: 51, 期号: 8, 页码: 1295-1301
Hu,ZY; Liu,ZL; Shao,H; Zhang,ZX; Ning,BX; Chen,M; Bi,DW; Zou,SC
收藏  |  浏览/下载:16/0  |  提交时间:2012/04/10
Comparison of TID response in core, input/output and high voltage transistors for flash memory 期刊论文
MICROELECTRONICS RELIABILITY, 2011, 卷号: 51, 期号: 6, 页码: 1148-1151
Liu,ZL; Hu,ZY; Zhang,ZX; Shao,H; Chen,M; Bi,DW; Ning,BX; Zou,SC
收藏  |  浏览/下载:8/0  |  提交时间:2012/04/10
A study of silicon oxynitride film prepared by ion beam assisted deposition 期刊论文
MATERIALS LETTERS, 2004, 卷号: 58, 期号: 17-18, 页码: 2261-2265
Wang,YJ; Cheng,XL; Lin,ZL; Zhang,CS; Xiao,HB; Zhang,F; Zou,SC
收藏  |  浏览/下载:11/0  |  提交时间:2012/03/24


©版权所有 ©2017 CSpace - Powered by CSpace