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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 High Coupling Efficiency of the Fiber-Coupled Module Based on Photonic-Band-Crystal Laser Diodes 期刊论文 CHIN. PHYS. LETT., 2017, 卷号: 34, 期号: 7, 页码: 074205 作者:  Yang Chen;  Yu-Fei Wang;  Hong-Wei Qu;  Yu-Fang Zhang;  Yun Liu 收藏  |  浏览/下载：35/0  |  提交时间：2018/07/02 Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer 期刊论文 digest of technical papers - symposium on vlsi technology, 2012, 页码: 97-98 Han, Genquan; Su, Shaojian; Wang, Lanxiang; Zhang, Zheng; Xue, Chunlai; Cheng, Buwen; Yeo, Yee-Chia; Wang, Wei; Gong, Xiao; Yang, Yue; Ivana; Guo, Pengfei; Guo, Cheng; Zhang, Guangze; Pan, Jisheng 收藏  |  浏览/下载：24/0  |  提交时间：2013/05/07 Large spot size and low-divergence angle operation of 917-nm edge-emitting semiconductor laser with an asymmetric waveguide structure 期刊论文 chinese optics letters, 2012, 卷号: 10, 期号: 6, 页码: 061401 Zhang, Jianxin; Liu, Lei; Chen, Wei; Liu, Anjin; Zhou, Wenjun; Zheng, Wanhua 收藏  |  浏览/下载：11/0  |  提交时间：2013/05/07 Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594 Wang JF (Wang Jian-Feng); Zhang BS (Zhang Bao-Shun); Zhang JC (Zhang Ji-Cai); Zhu JJ (Zhu Jian-Jun); Wang YT (Wang Yu-Tian); Chen J (Chen Jun); Liu W (Liu Wei); Jiang DS (Jiang De-Sheng); Yao DZ (Yao Duan-Zheng); Yang H (Yang Hui) 收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11 CHEMICAL-VAPOR-DEPOSITION  HIGH-QUALITY GAN  ALN BUFFER LAYER  NUCLEATION LAYER  PHASE EPITAXY  EVOLUTION  DENSITY  SILICON  STRESS  SI   Diode-pumped self-starting mode-locked Nd : YVO4 laser with semiconductor saturable absorber output coupler 期刊论文 chinese physics letters, 2004, 卷号: 21, 期号: 11, 页码: 2209-2211 Jia YL; Wei ZY; Zheng JA; Ling WJ; Wang YG; Ma XY; Zhang ZG 收藏  |  浏览/下载：134/26  |  提交时间：2010/03/09 SOLID-STATE LASERS