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Temperature dependence of photoluminescence spectra for green ligh emission from InGaN/GaN multiple wells 期刊论文
optics express, 2015, 卷号: 23, 期号: 12, 页码: 15935
W. Liu; D. G. Zhao; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; M. Shi; D. M.Zhao; X. Li; J. P. Liu; S. M. Zhang; H. Wang; H. Yang; Y. T. Zhang; G. T.Du
收藏  |  浏览/下载:19/0  |  提交时间:2016/03/23
Photon-number correlations in waveguide lattices with second order coupling 期刊论文
journal of optics, 2014, 卷号: 16, 期号: 11, 页码: 125007
Qi, F.; Feng, Z. G.; Wang, Y. F.; Xu, P.; Zhu, S. N.; Zheng, W. H.
收藏  |  浏览/下载:9/0  |  提交时间:2015/03/19
The effects of LT AlN buffer thickness on the optical properties of AlGaN grown by MOCVD and Al composition inhomogeneity analysis 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 4, 页码: 1113-1117
Wang, XL (Wang, X. L.); Zhao, DG (Zhao, D. G.); Jahn, U (Jahn, U.); Ploog, K (Ploog, K.); Jiang, DS (Jiang, D. S.); Yang, H (Yang, H.); Liang, JW (Liang, J. W.)
收藏  |  浏览/下载:68/0  |  提交时间:2010/03/29
Strain evolution in GaN layers grown on high-temperature AlN interlayers 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 15, 页码: art.no.152105
Wang JF (Wang J. F.); Yao DZ (Yao D. Z.); Chen J (Chen J.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang H.); Liang JW (Liang J. W.)
收藏  |  浏览/下载:31/0  |  提交时间:2010/04/11
The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers 期刊论文
materials letters, 2006, 卷号: 60, 期号: 29-30, 页码: 3693-3696
Wang XL (Wang X. L.); Zhao DG (Zhao D. G.); Li XY (Li X. Y.); Gong HM (Gong H. M.); Yang H (Yang H.); Liang JW (Liang J. W.)
收藏  |  浏览/下载:106/0  |  提交时间:2010/04/11
Electro-optic coefficients of Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice measured by polarization-maintaining fiber-optic Mach-Zehnder interferometer 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 14, 页码: art.no.141104
Zhao L (Zhao L.); Tu XG (Tu X. G.); Zuo YH (Zuo Y. H.); Chen SW (Chen S. W.); Wang QM (Wang Q. M.)
收藏  |  浏览/下载:23/0  |  提交时间:2010/04/11
Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 11, 页码: art.no.112106
Zhao DG (Zhao D. G.); Yang H (Yang Hui); Zhu JJ (Zhu J. J.); Jiang DS (Jiang D. S.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Wang YT (Wang Y. T.); Liang JW (Liang J. W.)
收藏  |  浏览/下载:14/0  |  提交时间:2010/04/11


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