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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes 期刊论文 Phys. Status Solidi A, 2017, 卷号: 214, 期号: 10, 页码: 1700320 作者:  Yao Xing;  De Gang Zhao;  De Sheng Jiang;  Xiang Li;  Feng Liang 收藏  |  浏览/下载：39/0  |  提交时间：2018/07/11 Special asymmetric low loss 1×5 optical power splitter 期刊论文 acta photonica sinica, 2013, 卷号: 42, 期号: 3, 页码: 298-302 Wang, Liang-Liang; An, Jun-Ming; Wu, Yuan-Da; Wang, Yue; Zhang, Jia-Shun,; Zhang, Xiao-Guang; Pan, Pan; Zhang, Li-Yao; Hu, Xiong-Wei; Zhao, De-Gang 收藏  |  浏览/下载：15/0  |  提交时间：2014/05/08 Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth 期刊论文 ieee photonics technology letters, 2013, 卷号: 25, 期号: 24, 页码: 2401-2404 Feng, Mei-Xin; Liu, Jian-Ping; Zhang, Shu-Ming; Jiang, De-Sheng; Li, Zeng-Cheng; Zhou, Kun; Li, De-Yao; Zhang, Li-Qun; Wang, Feng; Wang, Hui; Chen, Ping; Liu, Zong-Shun; Zhao, De-Gang; Sun, Qian; Yang, Hui 收藏  |  浏览/下载：15/0  |  提交时间：2014/04/09 Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594 Wang JF (Wang Jian-Feng); Zhang BS (Zhang Bao-Shun); Zhang JC (Zhang Ji-Cai); Zhu JJ (Zhu Jian-Jun); Wang YT (Wang Yu-Tian); Chen J (Chen Jun); Liu W (Liu Wei); Jiang DS (Jiang De-Sheng); Yao DZ (Yao Duan-Zheng); Yang H (Yang Hui) 收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11 CHEMICAL-VAPOR-DEPOSITION  HIGH-QUALITY GAN  ALN BUFFER LAYER  NUCLEATION LAYER  PHASE EPITAXY  EVOLUTION  DENSITY  SILICON  STRESS  SI