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Ultrasmooth epitaxial Ge grown on (001) Si utilizing a thin B-doped SiGe buffer layer 期刊论文
APPLIED PHYSICS EXPRESS, 2014, 卷号: 7, 期号: 11, 页码: -
作者:  Chen, D;  Zhang, M;  Xue, ZY;  Wang, G;  Guo, QL
收藏  |  浏览/下载:3/0  |  提交时间:2016/03/29
Photoresponsivity enhancement of pentacene organic phototransistors by introducing C60 buffer layer under source/drain electrodes 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 16, 页码: -
作者:  Yao, B;  Lv, WL;  Chen, DQ;  Fan, GY;  Zhou, MQ
收藏  |  浏览/下载:5/0  |  提交时间:2015/05/25


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