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Behavior of Si incorporation in AlxGa1-xAs(x=0 to 1) grown by gas source molecular beam epitaxy 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2007, 卷号: 26, 期号: 1, 页码: 1-+
Li, H; Li, AZ; Zhang, YG(张永刚); Qi, M
收藏  |  浏览/下载:15/0  |  提交时间:2012/03/24
Dislocation evaluation of GaN etched by photoenhanced KOH solution from atomic force microscope 期刊论文
FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2000, 卷号: 4086, 页码: 120-123
Zhao, ZB; Qi, M; Li, AZ
收藏  |  浏览/下载:9/0  |  提交时间:2012/03/24


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