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THE ANNEALING BEHAVIOR OF ARGON AND BORON DUAL-IMPLANTED SILICON AND ITS ELECTRICAL PERFORMANCE 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 卷号: 59, 期号: 0, 页码: 1045-1048
ZHU,JL; LI,XN; ZHOU,ZY; YU,ZW; WU,XH; LIN,X; BENG,RZ
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