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Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 5, 页码: article no.56104
作者:  Yu F
收藏  |  浏览/下载:93/6  |  提交时间:2011/07/06
Metal alloy and monoelemental nanoclusters in silica formed by sequential ion implantation and annealing in selected atmosphere 期刊论文
physica b-condensed matter, 2004, 卷号: 353, 期号: 1-2, 页码: 92-97
Ren F; Jiang CZ; Chen HB; Shi Y; Liu C; Wang JB
收藏  |  浏览/下载:18/0  |  提交时间:2010/03/17


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