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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 学科主题：微电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers 期刊论文 acta physica sinica, 2011, 卷号: 60, 期号: 5, 页码: article no.56104 作者:  Yu F 收藏  |  浏览/下载：93/6  |  提交时间：2011/07/06 separation by oxygen implantation  buried oxide  nitrogen implantation  positive charge density  RADIATION HARDNESS  IMPLANTING NITROGEN  ION-IMPLANTATION  IMPROVEMENT  TECHNOLOGY  OXYGEN  LAYER   Enhanced charge storage characteristics of silicon nanocrystals fabricated by electron-beam coevaporation of Si and SiOx(x=1 or 2) 期刊论文 journal of vacuum science & technology b, 2009, 卷号: 27, 期号: 6, 页码: 2462-2467 Chen C (Chen Chen); Jia R (Jia Rui); Li WL (Li Weilong); Li HF (Li Haofeng); Ye TC (Ye Tianchun); Liu XY (Liu Xinyu); Liu M (Liu Ming); Kasai S (Kasai Seiya); Tamotsu H (Tamotsu Hashizume); Wu NJ (Wu Nanjian) 收藏  |  浏览/下载：139/35  |  提交时间：2010/03/08 electron beam deposition   Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOIPMOSFET 期刊论文 chinese physics, 2005, 卷号: 14, 期号: 3, 页码: 565-570 Zheng ZS; Liu ZL; Zhang GQ; Li N; Fan K; Zhang EX; Yi WB; Chen M; Wang X 收藏  |  浏览/下载：24/0  |  提交时间：2010/03/17 SOIPMOSFET