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科研机构
半导体研究所 [33]
内容类型
期刊论文 [31]
会议论文 [2]
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2011 [1]
2010 [1]
2009 [1]
2008 [2]
2007 [2]
2006 [1]
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半导体物理 [33]
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Formation of shallow acceptors in ZnO doped by lithium with the addition of nitrogen
期刊论文
journal of physics and chemistry of solids, 2011, 卷号: 72, 期号: 6, 页码: 725-729
Gai, Yanqin
;
Tang, Gang
;
Li, Jingbo
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浏览/下载:32/0
  |  
提交时间:2012/06/14
Activation energy
Binding energy
Calculations
Complexation
Doping(additives)
Electronic structure
Zinc
Zinc oxide
Room-Temperature Ferromagnetism in Co-Doped In2O3 Nanocrystals
期刊论文
journal of physical chemistry c, 2010, 卷号: 114, 期号: 41, 页码: 17569-17573
Meng XQ (Meng Xiuqing)
;
Tang LM (Tang Liming)
;
Li JB (Li Jingbo)
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  |  
浏览/下载:52/0
  |  
提交时间:2010/11/02
THIN-FILMS
QUANTUM DOTS
AB-INITIO
INDIUM
ZNO
SEMICONDUCTORS
ACTIVATION
OXIDATION
ELECTRON
ENERGY
Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations
期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 15, 页码: art. no. 155403
作者:
Li JB
;
Hou QF
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  |  
浏览/下载:65/11
  |  
提交时间:2010/03/08
N-TYPE GAN
ELECTRON-MOBILITY TRANSISTORS
VAPOR-PHASE EPITAXY
DEFECTS
THERMOLUMINESCENCE
CARBON
TRAP
Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 102112
Ma, P
;
Gai, YQ
;
Wang, JX
;
Yang, FH
;
Zeng, YP
;
Li, JM
;
Li, JB
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  |  
浏览/下载:24/0
  |  
提交时间:2010/03/08
P-TYPE GAN
MOLECULAR-BEAM EPITAXY
AUGMENTED-WAVE METHOD
VAPOR-PHASE EPITAXY
ELECTRICAL-PROPERTIES
OXYGEN
ACTIVATION
SILICON
Neutron irradiation effect in two-dimensional electron gas of AlGaN/GaN heterostructures
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 3, 页码: 1045-1048
Zhang, ML
;
Wang, XL
;
Xiao, HL
;
Wang, CM
;
Ran, JX
;
Hu, GX
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  |  
浏览/下载:50/3
  |  
提交时间:2010/03/08
TRANSPORT
PROTON
HEMTS
Electron irradiation induced defects in high temperature annealed InP single crystal
期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 3, 页码: 1603-1607
Wang B (Wang Bo)
;
Zhao YW (Zhao You-Wen)
;
Dong ZY (Dong Zhi-Yuan)
;
Deng AH (Deng Ai-Hong)
;
Miao SS (Miao Shan-Shan)
;
Yang J (Yang Jun)
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  |  
浏览/下载:27/0
  |  
提交时间:2010/03/29
InP
Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property
期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 9, 页码: 5536-5541
Zhao, YW (Zhao You-Wen)
;
Miao, SS (Miao Shan-Shan)
;
Dong, ZY (Dong Zhi-Yuan)
;
Lue, XH (Lue Xiao-Hong)
;
Deng, AH (Deng Ai-Hong)
;
Yang, J (Yang Jun)
;
Wang, B (Wang Bo)
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  |  
浏览/下载:35/0
  |  
提交时间:2010/03/29
indium phosphide
Shrinkage of nanocavities in silicon during electron beam irradiation
期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 3, 页码: art.no.034304
Zhu XF (Zhu Xianfang)
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  |  
浏览/下载:70/0
  |  
提交时间:2010/04/11
PREFERENTIAL AMORPHIZATION
ION IRRADIATION
AMORPHOUS SI
IN-SITU
VOIDS
Surface morphology control of strained InAs/GaAs(331)A films: From nanowires to island-pit pairs
期刊论文
applied physics letters, 2005, 卷号: 86, 期号: 1, 页码: art.no.013104
Gong Z
;
Niu ZC
;
Fang ZD
;
Miao ZH
;
Feng SL
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  |  
浏览/下载:61/0
  |  
提交时间:2010/03/17
MOLECULAR-BEAM EPITAXY
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects
会议论文
17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005
Zhao, YW
;
Dong, ZY
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  |  
浏览/下载:220/68
  |  
提交时间:2010/03/29
ENCAPSULATED CZOCHRALSKI INP
SEMICONDUCTOR COMPOUND-CRYSTALS
STIMULATED CURRENT SPECTROSCOPY
CURRENT TRANSIENT SPECTROSCOPY
DEEP-LEVEL DEFECTS
ANNEALING AMBIENT
POINT-DEFECTS
FE
PHOSPHIDE
DONORS
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