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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy 期刊论文 journal of applied physics, 2010, 卷号: 107, 期号: 10, 页码: art. no. 104510 Xu XQ (Xu Xiaoqing); Liu XL (Liu Xianglin); Guo Y (Guo Yan); Wang J (Wang Jun); Song HP (Song Huaping); Yang SY (Yang Shaoyan); Wei HY (Wei Hongyuan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：182/49  |  提交时间：2010/06/18 PHOTOEMISSION-SPECTROSCOPY  PRECISE DETERMINATION  GA-FACE  SURFACE  ALN  HETEROJUNCTIONS  DISCONTINUITY  LEVEL   Influence of interface modification on the performance of polymer/Bi2S3 nanorods bulk heterojunction solar cells 期刊论文 applied surface science, 2010, 卷号: 257, 期号: 2, 页码: 423-428 Wang ZJ (Wang Zhijie); Qu SC (Qu Shengchun); Zeng XB (Zeng Xiangbo); Liu JP (Liu Junpeng); Tan FR (Tan Furui); Jin L (Jin Lan); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：199/30  |  提交时间：2010/10/11 Bulk heterojunction solar cells  Surface modification  Nanorods   Bioactivity of Mg-ion-implanted zirconia and titanium 期刊论文 applied surface science, 2007, 卷号: 253, 期号: 6, 页码: 3326-3333 Liang H; Wan YZ; He F; Huang Y; Xu JD; Li JM; Wang YL; Zhao ZG 收藏  |  浏览/下载：22/0  |  提交时间：2010/03/29 bioactivity   Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 1062-1068 Niu ZC; Wang XD; Miao ZH; Feng SL 收藏  |  浏览/下载：77/6  |  提交时间：2010/08/12 crystal morphology  quantum dots  molecular beam epitaxy  semiconducting gallium arsenide  semiconducting indium gallium arsenide  1.35 MU-M  GAAS-SURFACES  PHOTOLUMINESCENCE  ISLANDS   Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates 期刊论文 science in china series e-technological sciences, 1998, 卷号: 41, 期号: 2, 页码: 203-207 Wang LS; Liu XG; Zan YD; Wang D; Wang J; Lu DC; Wang ZG 收藏  |  浏览/下载：30/0  |  提交时间：2010/08/12 fabrication of GaN epitaxial films  Al2O3/Si(001) substrate  metalorganic chemical deposition  crystal structure and surface morphology  photoluminescence spectrum  GROWTH  DIODES  BUFFER LAYER   EFFECT OF SURFACE-STRUCTURES UPON ULTRATHIN-FILM INTERFERENCE-FRINGES 期刊论文 journal of materials research, 1993, 卷号: 8, 期号: 9, 页码: 2315-2318 LU TJ; OGAWA T; TOYODA K; WANG ZG 收藏  |  浏览/下载：26/0  |  提交时间：2010/11/15