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科研机构
半导体研究所 [12]
内容类型
期刊论文 [11]
会议论文 [1]
发表日期
2011 [2]
2006 [2]
2004 [1]
2003 [2]
2002 [2]
2001 [1]
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学科主题
半导体材料 [12]
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Synthesis and microwave absorbing properties of poly(3,4-ethylenedioxythiophene) (PEDOT) microspheres
期刊论文
polymers for advanced technologies, 2011, 卷号: 22, 期号: 5, 页码: 532-537
Ni XW
;
Hu XJ
;
Zhou SY
;
Sun CH
;
Bai XX
;
Chen P
收藏
  |  
浏览/下载:59/2
  |  
提交时间:2011/07/05
conducting polymers
hollow microspheres
microwave absorbing properties
poly(3,4-ethylenedioxythiophene) (PEDOT)
POLY 3,4-ETHYLENEDIOXYTHIOPHENE
CORE-SHELL
HOLLOW
POLYMERIZATION
POLYANILINE
SURFACE
ELECTROCHEMISTRY
POLYTHIOPHENES
NANOPARTICLES
DISPERSION
Anisotropic transport of two-dimensional electron gas modulated by embedded elongated GaSb/GaAs quantum dots
期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 3, 页码: article no.32103
Li GD
;
Jiang C
;
Zhu QS
;
Sakaki H
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  |  
浏览/下载:60/9
  |  
提交时间:2011/07/05
HETEROJUNCTION
MOBILITY
SCATTERING
PHYSICS
FIELD
Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped GaAs/AlGaAs structure
期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1379-1383
Shu Q
;
Shu YC
;
Zhang GJ
;
Liu RB
;
Yao JH
;
Pi B
;
Xing XD
;
Lin YW
;
Xu JJ
;
Wang ZG
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  |  
浏览/下载:65/0
  |  
提交时间:2010/04/11
two-dimensional electron gas
quantum Hall effect
SdH oscillations
persistent photoconductivity
HETEROSTRUCTURES
ALXGA1-XAS
SCATTERING
LIFETIME
MOBILITY
GAAS
TE
Electron irradiation-induced defects in InP pre-annealed at high temperature
期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383
Zhao YW (Zhao Y. W.)
;
Dong ZY (Dong Z. Y.)
;
Deng AH (Deng A. H.)
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  |  
浏览/下载:44/0
  |  
提交时间:2010/04/11
indium phosphide
defect
irradiation
THERMALLY STIMULATED CURRENT
UNDOPED SEMIINSULATING INP
DEEP-LEVEL DEFECTS
FRENKEL PAIRS
FE
SPECTROSCOPY
PHOSPHIDE
AMBIENT
TRAPS
Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma
期刊论文
journal of crystal growth, 2004, 卷号: 264, 期号: 1-3, 页码: 7-12
Hu ZH
;
Liao XB
;
Diao HW
;
Kong GL
;
Zeng XB
;
Xu YY
收藏
  |  
浏览/下载:33/3
  |  
提交时间:2010/03/09
annealing
Annealing and activation of silicon implanted in semi-insulating InP substrates
期刊论文
materials science in semiconductor processing, 2003, 卷号: 6, 期号: 4, 页码: 215-218
Dong HW
;
Zhao YW
;
Li JM
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2010/08/12
semi-insulating InP
ion implantation
silicon
annealing
activation
SI+-IMPLANTATION
PHOSPHIDE VAPOR
UNDOPED INP
FE
WAFERS
UNIFORMITY
PRESSURE
Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances
期刊论文
journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7
Dong ZY
;
Zhao YW
;
Zeng YP
;
Duan ML
;
Sun WR
;
Jiao JH
;
Lin LY
收藏
  |  
浏览/下载:351/16
  |  
提交时间:2010/08/12
annealing
defects
etching
semiconducting indium phosphide
FE-DOPED INP
SEMIINSULATING INP
INDIUM-PHOSPHIDE
DEFECTS
DIFFUSION
CRYSTALS
WAFERS
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
会议论文
9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001
Zhao YW
;
Sun NF
;
Dong HW
;
Jiao JH
;
Zhao JQ
;
Sun TN
;
Lin LY
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
indium phosphide
semi-insulating
annealing
PICTS
photoluminescence
SEMIINSULATING INP
INDIUM-PHOSPHIDE
FE
PHOTOLUMINESCENCE
TEMPERATURE
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
期刊论文
materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 521-524
Zhao YW
;
Sun NF
;
Dong HW
;
Jiao JH
;
Zhao JQ
;
Sun TN
;
Lin LY
收藏
  |  
浏览/下载:82/19
  |  
提交时间:2010/08/12
indium phosphide
semi-insulating
annealing
PICTS
photoluminescence
SEMIINSULATING INP
INDIUM-PHOSPHIDE
FE
PHOTOLUMINESCENCE
TEMPERATURE
Effect of as interstitial diffusionon on the properties of undoped semi-insulating LECGaAs
期刊论文
rare metals, 2001, 卷号: 20, 期号: 3, 页码: 187-191
Yang RX
;
Zhang FQ
;
Chen NF
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  |  
浏览/下载:91/3
  |  
提交时间:2010/08/12
semi-insulating GaAs
intrinsic acceptor defects
As interstitial indiffusion
As pressure
annealing
SEMIINSULATING GAAS
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