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科研机构
半导体研究所 [12]
内容类型
期刊论文 [11]
会议论文 [1]
发表日期
2011 [1]
2010 [2]
2009 [3]
2008 [1]
2006 [1]
2005 [1]
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半导体材料 [12]
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Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者:
Yin ZG
;
Zhang XW
;
Tan HR
;
Fan YM
;
Zhang SG
收藏
  |  
浏览/下载:42/3
  |  
提交时间:2011/07/05
HIGH-PRESSURE SYNTHESIS
VAPOR-DEPOSITION
NUCLEATION
EMISSION
DIAMOND
GROWTH
Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 15, 页码: art. no. 151904
作者:
Jin P
;
Wei HY
;
Song HP
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  |  
浏览/下载:185/32
  |  
提交时间:2010/05/04
alloying
annealing
electrical conductivity
excitons
II-VI semiconductors
magnesium compounds
MOCVD coatings
photoluminescence
positron annihilation
semiconductor thin films
vacancies (crystal)
wide band gap semiconductors
zinc compounds
SEMICONDUCTORS
EMISSION
ORIGIN
DIODES
Optical properties and electrical bistability of CdS nanoparticles synthesized in dodecanethiol
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 16, 页码: art. no. 163112
Tang AW (Tang Aiwei)
;
Teng F (Teng Feng)
;
Hou YB (Hou Yanbing)
;
Wang YS (Wang Yongsheng)
;
Tan FR (Tan Furui)
;
Qu SC (Qu Shengchun)
;
Wang ZG (Wang Zhanguo)
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  |  
浏览/下载:202/32
  |  
提交时间:2010/05/07
LIGHT-EMITTING-DIODES
QUANTUM DOTS
NANOCRYSTALS
POLYMER
DEVICES
THERMOLYSIS
ASSEMBLIES
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS
;
Zhao, YM
;
Wang, L
;
Wang, L
;
Zhao, WS
;
Liu, XF
;
Ji, G
;
Zeng, YP
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2010/03/09
in-situ doping
boron
aluminum
memory effects
hot-wall LPCVD
4H-SiC
Valence band offset of ZnO/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy
期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 9, 页码: art. no. 095305
作者:
Jia CH
;
Zhou XL
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  |  
浏览/下载:171/27
  |  
提交时间:2010/03/08
Dislocation core effect scattering in a quasitriangle potential well
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:
Wei HY
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  |  
浏览/下载:237/104
  |  
提交时间:2010/03/08
aluminium compounds
carrier density
carrier mobility
dislocation density
dislocation scattering
gallium compounds
III-V semiconductors
semiconductor heterojunctions
wide band gap semiconductors
Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure
期刊论文
journal of non-crystalline solids, 2008, 卷号: 354, 期号: 19-25, 页码: 2282-2285
Kazanskii, AG
;
Kong, GL
;
Zeng, XB
;
Hao, HY
;
Liu, FZ
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  |  
浏览/下载:104/29
  |  
提交时间:2010/03/08
silicon
conductivity
chemical vapor deposition
microcrystallinity
absorption
photoconductivity
Nanocrystalline silicon films with high conductivity and the application for PIN solar cells
期刊论文
vacuum, 2006, 卷号: 81, 期号: 1, 页码: 126-128
Min C (Cui Min)
;
Zhang WJ (Zhang Weija)
;
Wang TM (Wang Tianmin)
;
Jin F (Jin Fei)
;
Li GH (Li Guohua)
;
Ding K (Ding Kun)
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2010/04/11
nc-Si : H
conductivity
PECVD
films
solar cells
Photoluminescence investigation of two-dimensional electron gas in an undoped AlxGa1-xN/GaN heterostructure
期刊论文
chinese physics letters, 2005, 卷号: 22, 期号: 8, 页码: 2096-2099
Han, XX
;
Wu, JJ
;
Li, JM
;
Cong, GW
;
Liu, XL
;
Zhu, QS
;
Wang, ZG
收藏
  |  
浏览/下载:45/17
  |  
提交时间:2010/03/17
DISLOCATION SCATTERING
Study on variable capacitance diode of (p)nc-Si : H/(n)c-Si heterojunction
期刊论文
vacuum, 2003, 卷号: 71, 期号: 4, 页码: 465-469
Wei WS
;
Wang TM
;
Zhang CX
;
Li GH
;
Li YX
收藏
  |  
浏览/下载:435/4
  |  
提交时间:2010/08/12
nc-Si : H film
(p)nc-Si : H/(n)c-Si heterojunction
variable capacitance diode
NANOCRYSTALLINE SILICON FILMS
ELECTRICAL CHARACTERIZATION
CONDUCTION MECHANISM
SPECTROSCOPY
STATES
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