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科研机构
半导体研究所 [8]
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期刊论文 [8]
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2011 [1]
2008 [1]
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半导体材料 [8]
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Microstructure and electrical properties of Y(NO(3))(3)center dot 6H(2)O-doped ZnO-Bi(2)O(3)-based varistor ceramics
期刊论文
journal of alloys and compounds, 2011, 卷号: 509, 期号: 38, 页码: 9312-9317
Xu D
;
Cheng XN
;
Yuan HM
;
Yang J
;
Lin YH
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浏览/下载:20/0
  |  
提交时间:2011/09/14
ZNO-BASED VARISTORS
ZNO-PR6O11-BASED VARISTORS
SINTERING TEMPERATURE
DIELECTRIC-PROPERTIES
BI2O3 VAPORIZATION
RELEVANT PARAMETER
COOLING RATE
STABILITY
VOLTAGE
OXIDE
Magnetic coupling properties of mn-doped ZnO nanowires: First-principles calculations
期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 7, 页码: art. no. 073903
Shi, H
;
Duan, Y
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浏览/下载:44/2
  |  
提交时间:2010/03/08
HIGH CURIE-TEMPERATURE
SPINODAL-DECOMPOSITION
ROOM-TEMPERATURE
1ST PRINCIPLES
THIN-FILMS
SEMICONDUCTORS
FERROMAGNETISM
STABILIZATION
GROWTH
PHASE
Nanoinstabilities as revealed by shrinkage of nanocavities in silicon during irradiation
期刊论文
international journal of nanotechnology, 2006, 卷号: 3, 期号: 4 sp.iss.si, 页码: 492-516
Zhu, XF (Zhu, Xianfang)
;
Wang, ZG (Wang, Zhanguo)
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浏览/下载:60/0
  |  
提交时间:2010/03/29
nanocavity
nanoparticle
nanoinstabilities
open volume defect
thermodynamic nonequilibrium
nanosize
nanotime
energetic beam irradiation
amorphous structure
nanocurvature
surface energy
WALLED CARBON NANOTUBES
AMORPHOUS-SILICON
ION IRRADIATION
PREFERENTIAL AMORPHIZATION
IN-SITU
INSTABILITY
BEAM
IMPLANTATION
CAVITIES
POINT
Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD
期刊论文
ferroelectrics, 2002, 卷号: 271, 期号: 0, 页码: 1707-1713
Wang H
;
Shang SX
;
Yao WF
;
Hou Y
;
Xu XH
;
Wang D
;
Wang M
;
Yu JZ
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  |  
浏览/下载:80/0
  |  
提交时间:2010/08/12
Bi2Ti2O7
thin film
MOCVD
(111) orientation
CHEMICAL-VAPOR-DEPOSITION
CRYSTAL THIN-FILMS
Hydrogenated amorphous silicon films with significantly improved stability
期刊论文
solar energy materials and solar cells, 2001, 卷号: 68, 期号: 1, 页码: 123-133
Sheng SR
;
Liao XB
;
Ma ZX
;
Yue GZ
;
Wang YQ
;
Kong GL
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  |  
浏览/下载:50/0
  |  
提交时间:2010/08/12
amorphous silicon
stability
A-SI-H
CONSTANT PHOTOCURRENT METHOD
PERSISTENT PHOTOCONDUCTIVITY
URBACH EDGE
SOLAR-CELLS
GAP STATES
ABSORPTION
DENSITY
SPECTROSCOPY
INCREASE
Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots
期刊论文
journal of crystal growth, 2000, 卷号: 220, 期号: 1-2, 页码: 51-55
Liu BL
;
Xu ZY
;
Liu HY
;
Wang ZG
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  |  
浏览/下载:49/0
  |  
提交时间:2010/08/12
InAlAs/AlGaAs
quantum dots
photoluminescence
time-resolved photoluminescence
LIFETIME
Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature
期刊论文
journal of crystal growth, 1998, 卷号: 194, 期号: 3-4, 页码: 426-429
Liu JP
;
Kong MY
;
Huang DD
;
Li JP
;
Sun DZ
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  |  
浏览/下载:30/0
  |  
提交时间:2010/08/12
X-ray diffraction
SiGe/Si
disilane cracking
dynamic simulation
PHOTOLUMINESCENCE
SILICON
LAYERS
SI2H6
DISORDERED SUPERLATTICES
THEORETICAL INVESTIGATION OF THE DYNAMIC PROCESS OF THE ILLUMINATION OF GAAS
期刊论文
physical review b, 1994, 卷号: 50, 期号: 8, 页码: 5189-5195
REN GB
;
WANG ZG
;
XU B
;
BING Z
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  |  
浏览/下载:18/0
  |  
提交时间:2010/11/15
SPIN-RESONANCE SIGNAL
ASGA ANTISITE DEFECT
METASTABLE EL2
GROWN GAAS
PHOTOCONDUCTIVITY
PHOTORESPONSE
PHOTOCURRENT
SPECTRUM
RECOVERY
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