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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Growth behavior of AlInGaN films 期刊论文 journal of crystal growth, 2009, 卷号: 311, 期号: 3, 页码: 474-477 Shang JZ; Zhang BP; Mao MH; Cai LE; Zhang JY; Fang ZL; Liu BL; Yu JZ; Wang QM; Kusakabe K; Ohkawa K 收藏  |  浏览/下载：216/66  |  提交时间：2010/03/08 Scanning electron microscope  Strain  X-ray diffraction  AlInGaN   Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale 期刊论文 journal of applied physics, 2008, 卷号: 103, 期号: 1, 页码: art. no. 014314 Gao, HY; Yan, FW; Zhang, Y; Li, JM; Zeng, YP; Wang, GH 收藏  |  浏览/下载：75/3  |  提交时间：2010/03/08 GAN-BASED LEDS  EFFICIENCY  FABRICATION  IMPROVEMENT  OVERGROWTH   Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate 期刊论文 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 337-340 Zhou HY; Qu SC; Wang ZG; Liang LY; Cheng BC; Liu JP; Peng WQ 收藏  |  浏览/下载：40/0  |  提交时间：2010/04/11 anodic alumina films   Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Zhou HY; Qu SC; Wang ZG; Liang LY; Cheng BC; Liu JP; Peng WQ 收藏  |  浏览/下载：132/26  |  提交时间：2010/03/29 anodic alumina films   Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells 期刊论文 journal of crystal growth, 1997, 卷号: 180, 期号: 1, 页码: 22-26 Wang XL; Sun DZ; Kong MY; Hou X; Zeng YP 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/17 quantum wells  GSMBE  InGaAs/InP  photoluminescence  MOLECULAR-BEAM EPITAXY  VAPOR-PHASE EPITAXY  ROOM-TEMPERATURE  MULTILAYERS  DEFECTS  DISLOCATIONS  MODULATION  LASERS  SHIFT