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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy 会议论文 10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29 SHORT-PERIOD SUPERLATTICES  RAMAN-SCATTERING  QUANTUM-WELLS  GROWTH  ROUGHNESS  SEGREGATION  ALAS/GAAS  ALAS  GAAS   Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry 会议论文 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 作者:  Xu B;  Ye XL 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 reflectance-difference spectroscopy  indium segregation  InGaAs/GaAs quantum wells  EPITAXY-GROWN INGAAS/GAAS  SURFACE SEGREGATION  INTERFACE   Space-grown SI-GaAs and its application 会议论文 12th international semicoducting and insulating materials conference (simc-xii2002), smolenice, slovakia, jun 30-jul 05, 2002 Chen NF; Zhong XG; Zhang M; Lin LY 收藏  |  浏览/下载：14/0  |  提交时间：2010/10/29 SEMIINSULATING GALLIUM-ARSENIDE  FLOATING-ZONE GROWTH  CRYSTAL-GROWTH  ZERO GRAVITY  MICROGRAVITY  SEGREGATION  STOICHIOMETRY  SILICON  DEFECTS  INSB   Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 会议论文 50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999 作者:  Xu B;  Ye XL 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 quantum dots  high index  molecular beam epitaxy  photoluminescence  SURFACE SEGREGATION  ORIENTED GAAS  INGAAS  ISLANDS  WELLS  DISKS   Semi-insulating GaAs grown in outer space 会议论文 iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999 Chen NF; Zhong XR; Lin LY; Xie X; Zhang M 收藏  |  浏览/下载：20/0  |  提交时间：2010/11/15 GaAs  outer space  microgravity  integrated circuit  SEMIINSULATING GALLIUM-ARSENIDE  LEC-GAAS  DEFECTS  STOICHIOMETRY  SEGREGATION  CARBON  BORON