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Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes 期刊论文
modern physics letters b, 2016, 卷号: 20, 页码: 1650221
Yang Huang; Zhiqiang Liu; Xiaoyan Yi; Yao Guo; Shaoteng Wu; Guodong Yuan; Junxi Wang; Guohong Wang; Jinmin Li
收藏  |  浏览/下载:16/0  |  提交时间:2017/03/16
High Quantum Efficiency and Low Droop of 400-nm InGaN Near-Ultraviolet Light-Emitting Diodes Through Suppressed Leakage Current 期刊论文
ieee journal of quantum electronics, 2015, 卷号: 51, 期号: 9, 页码: 3300605
Panpan Li; Hongjian Li; Liancheng Wang; Xiaoyan Yi; Guohong Wang
收藏  |  浏览/下载:15/0  |  提交时间:2016/04/15
Ti Schottky barrier diodes on n-type 6H-SiC 会议论文
6th international conference on solid-state and integrated-circuit technology, shanghai, peoples r china, oct 22-25, 2001
作者:  Yu F
收藏  |  浏览/下载:13/0  |  提交时间:2010/10/29
Temperature-stimulated abnormal annealing of neutron-induced damage in high-resistivity silicon detectors 期刊论文
nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1997, 卷号: 385, 期号: 2, 页码: 321-329
Li Z; Li CJ; Verbitskaya E; Eremin V
收藏  |  浏览/下载:16/0  |  提交时间:2010/11/17
Investigation on the N-eff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradations 期刊论文
nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1996, 卷号: 377, 期号: 0, 页码: 265-275
Li Z; Li CJ; Eremin V; Verbitskaya E
收藏  |  浏览/下载:12/0  |  提交时间:2010/11/17
Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7x10(15)n/cm(2) 期刊论文
ieee transactions on nuclear science, 1996, 卷号: 43, 期号: 3, 页码: 1590-1598
Li Z; Ghislotti G; Kraner HW; Li CJ; Nielsen B; Feick H; Lindstroem G
收藏  |  浏览/下载:15/0  |  提交时间:2010/11/17


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