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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文 journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464 作者:  Wang YT;  Zhao DG;  Zhang SM;  Yang H;  Jiang DS 收藏  |  浏览/下载：147/11  |  提交时间：2010/04/04 Nitride materials  Crystal growth  X-ray diffraction  TIME-RESOLVED PHOTOLUMINESCENCE  LIGHT-EMITTING-DIODES  PIEZOELECTRIC FIELDS  LASER-DIODES  DEPENDENCE  RECOMBINATION  POLARIZATION  DYNAMICS  GROWTH  MOCVD   The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Yang, H; Chen, Y; Wang, LB; Yi, XY; Fan, JM; Liu, ZQ; Yang, FH; Wang, LC; Wang, GH; Zeng, YP; Li, JM 收藏  |  浏览/下载：47/0  |  提交时间：2010/03/09 GaN-based LED  grinding  ray tracing   The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Wei, TB; Duan, RF; Wang, JX; Li, JM; Huo, ZQ; Zeng, YP 收藏  |  浏览/下载：36/0  |  提交时间：2010/03/09 HVPE  GaN  nitridation  polarity  etching   Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 mu m 期刊论文 optics communications, 2008, 卷号: 281, 期号: 6, 页码: 1582-1587 Mao, RW; Tsai, CS; Yu, JZ; Wang, QM 收藏  |  浏览/下载：39/1  |  提交时间：2010/03/08 resonant cavity enhanced (RCE)  photodetector  line-width  free carrier absorption