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Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD 期刊论文
journal of the korean physical society, 2010, 卷号: 57, 期号: 1, 页码: 128-132
Sun YP (Sun Yuanping); Sun Y (Sun Yuanping); Cho YH (Cho Yong-Hoon); Wang H (Wang Hui); Wang LL (Wang Lili); Zhang SM (Zhang Shuming); Yang H (Yang Hui)
收藏  |  浏览/下载:513/2  |  提交时间:2010/08/17
Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 14, 页码: art. no. 145410
作者:  Zhang SM;  Yang H;  Yang H;  Wang YT;  Zhu JJ
收藏  |  浏览/下载:72/0  |  提交时间:2010/03/08
Frequency dependence of junction capacitance of GaN p-i-n UV detectors 期刊论文
solid-state electronics, 2005, 卷号: 49, 期号: 7, 页码: 1135-1139
作者:  Zhao DG
收藏  |  浏览/下载:55/35  |  提交时间:2010/03/17
Study on the thermal stability of InN by in-situ laser reflectance system 期刊论文
journal of crystal growth, 2005, 卷号: 281, 期号: 2-4, 页码: 310-317
Huang Y; Wang H; Sun Q; Chen J; Wang JF; Wang YT; Yang H
收藏  |  浏览/下载:44/12  |  提交时间:2010/03/17
Effects of Cu-Wire Surface Fluctuations on Early Failures 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 12, 页码: 2330-2334
作者:  Wang Hui;  Zhu Jianjun;  Wang Hui
收藏  |  浏览/下载:20/0  |  提交时间:2010/11/23
Effect of SiO2 encapsulation on the nitrogen reorganization in a GaNAs/GaAs single quantum well 期刊论文
chinese physics letters, 2004, 卷号: 21, 期号: 3, 页码: 521-523
作者:  Xu YQ
收藏  |  浏览/下载:65/21  |  提交时间:2010/03/09
Photoluminescence measurements on erbium-doped silicon 会议论文
conference on integrated optoelectronics ii, beijing, peoples r china, sep 18-19, 1998
Lei HB; Yang QQ; Ou HY; Wang QM
收藏  |  浏览/下载:22/0  |  提交时间:2010/10/29


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