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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 发表日期：2008    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Rearrangeable nonblocking 88 matrix optical switches based on extended banyan network (EI CONFERENCE) 会议论文 Zha Y.; Sun D.-G.; Liu T.; Zhang Y.; Li X.; Jiang J. 收藏  |  浏览/下载：16/0  |  提交时间：2013/03/25 Based on the CROSSBAR network (CN) and the BANYAN network (BN)  8 matrix optical switch  two new rearrangeable nonblocking constructions of extended BANYAN network (EBN) are proposed for implementing 88 optical matrix switch. The interconnection characteristics of these two types of rearrangeable nonblocking EBN were studied  optical insertion loss of 4.6 dB  and the logic program for driving switching units was provided. The calculated insertion loss was 3.3 dB for 88 optical matrix switch. Silica waveguide 88 matrix optical switch was designed and fabricated according to the calculated results. The silica waveguide propagation loss of 0.1 dB/cm and waveguide-fiber coupling loss of 0.5dB/point were measured. With the fabricated 87times  cross-talk of -38 dB  polarization dependent loss of 0.4 dB  averaged switching power of 1.6 W  and switching time of 1 ms were achieved. A basic agreement between experimental results and theoretical calculated values was achieved.   808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China Wang Y.; Yang Y.; Qin L.; Wang C.; Yao D.; Liu Y.; Wang L. 收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25 808nm high power diode lasers  which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems  have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers  and they could lead to new applications where space  weight and electrical power are critical. High efficiency devices generate less waste heat  which means less strain on the cooling system and more tolerance to thermal conductivity variation  a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s  1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars  we fabricate a 1 3 arrays  the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A  the slope efficiency is 3.37 W/A. 2008 SPIE.   Characteristic comparisons of Yb-Er co-doped Al2O3 waveguide amplifiers with different geometric structures 会议论文 2nd Conference on Optoelectronic Devices and Integration, Beijing, PEOPLES R CHINA, 2007-11-12 作者:  Li, Shufeng;  Li, Chengren;  Liu, Zhongfan;  Zhu, Wenxuan;  Song, Changlie 收藏  |  浏览/下载：9/0  |  提交时间：2019/12/27 Yb-Er co-doped Al2O3 waveguide amplifier  etched cross-section  mode field distribution  gain