CORC

在结果中检索

CORC

浏览/检索结果: 共44条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Promoting strain relaxation of Si072Ge028 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD 期刊论文
http://dx.doi.org/10.1016/j.apsusc.2008.07.179, 2008
Zhou, ZW; Cai, ZM; Li, C; Lai, HK; Chen, SY; Yu, JZ; 李成; 陈松岩
收藏  |  浏览/下载：7/0  |  提交时间：2015/07/22
Promoting strain relaxation of Si072Ge028 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD 期刊论文
http://dx.doi.org/10.1016/j.apsusc.2008.07.179, 2008
Zhou, ZW; Cai, ZM; Li, C; Lai, HK; Chen, SY; Yu, JZ; 李成
收藏  |  浏览/下载：5/0  |  提交时间：2013/12/12
Promoting strain relaxation of Si072Ge028 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD 期刊论文
http://dx.doi.org/10.1016/j.apsusc.2008.07.179, 2008
Zhou, Z. W.; Cai, Z. M.; Li, C.; Lai, H. K.; Chen, S. Y.; Yu, J. Z.; 陈松岩
收藏  |  浏览/下载：6/0  |  提交时间：2013/12/12
Promoting strain relaxation of si0.72ge0.28 film on si (100) substrate by inserting a low-temperature ge islands layer in uhvcvd 期刊论文
Applied surface science, 2008, 卷号: 255, 期号: 5, 页码: 2660-2664
作者:  Zhou, Zhiwen;  Cai, Zhimeng;  Li, Cheng;  Lai, Hongkai;  Chen, Songyan
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12
Comment on "Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1-x metamorphic buffer layer for the growth of Ge layer on Si substrate" [Appl Phys Lett 90, 083507 (2007)] 期刊论文
http://dx.doi.org/10.1063/1.3003873, 2008
Zhou, ZW; Li, C; Chen, SY; Lai, HK; Yu, JZ; 李成
收藏  |  浏览/下载：3/0  |  提交时间：2015/07/22
Comment on "Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1-x metamorphic buffer layer for the growth of Ge layer on Si substrate" Appl Phys Lett 90, 083507 (2007) 期刊论文
http://dx.doi.org/10.1063/1.3003873, 2008
Zhou, Z. W.; Li, C.; Chen, S. Y.; Lai, H. K.; Yu, J. Z.; 陈松岩
收藏  |  浏览/下载：4/0  |  提交时间：2013/12/12
Comment on "Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1-x metamorphic buffer layer for the growth of Ge layer on Si substrate" [Appl Phys Lett 90, 083507 (2007)] 期刊论文
http://dx.doi.org/10.1063/1.3003873, 2008
Zhou, ZW; Li, C; Chen, SY; Lai, HK; Yu, JZ; 李成
收藏  |  浏览/下载：3/0  |  提交时间：2013/12/12
Comment on "Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1-x metamorphic buffer layer for the growth of Ge layer on Si substrate" Appl Phys Lett 90, 083507 (2007) 期刊论文
http://dx.doi.org/10.1063/1.3003873, 2008
Zhou, Z. W.; Li, C.; Chen, S. Y.; Lai, H. K.; Yu, J. Z.; 陈松岩
收藏  |  浏览/下载：6/0  |  提交时间：2015/07/22
Comment on "use of si(+) pre-ion-implantation on si substrate to enhance the strain relaxation of the ge(x)si(1-x) metamorphic buffer layer for the growth of ge layer on si substrate" [appl. phys. lett. 90, 083507 (2007)] 期刊论文
Applied physics letters, 2008, 卷号: 93, 期号: 15, 页码: 2
作者:  Zhou, Zhiwen;  Li, Cheng;  Chen, Songyan;  Lai, Hongkai;  Yu, Jinzhong
收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12
麦草的常压甘油自催化组分分离及其2,3-丁二醇发酵 学位论文
博士, 过程工程研究所: 中国科学院过程工程研究所, 2008
孙付保
收藏  |  浏览/下载：32/0  |  提交时间：2013/09/13

©版权所有 ©2017 CSpace - Powered by CSpace