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浏览/检索结果: 共18条，第1-10条 帮助 限定条件 发表日期：2004     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Influence of nitrogen annealing on electrical properties of lead zirconate titanate thin film deposited on titanium metal foil 期刊论文 Materials letters, 2004, 卷号: 58, 期号: 5, 页码: 706-710 作者:  Zhang, GQ;  Zou, Q;  Sun, P;  Mei, X;  Ruda, HE 收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12 Ferroelectrics  Electrical properties  Heat treatment  Nitrogen annealing  Dielectric constant  Leakage current   恒电流应力引起HfO2栅介质薄膜的击穿特性 期刊论文 半导体学报, 2004 韩德栋; 康晋锋; 王成钢; 刘晓彦; 韩汝琦; 王玮 收藏  |  浏览/下载：1/0  |  提交时间：2015/11/12 恒电流应力 高k HfO2 击穿   A dual-metal gate integration process for CMOS with sub-1-nm EOT HfO2 by using HfN replacement gate 期刊论文 ieee electron device letters, 2004 Ren, C; Yu, HY; Kang, JF; Wang, XP; Ma, HHH; Yeo, YC; Chan, DSH; Li, MF; Kwong, DL 收藏  |  浏览/下载：6/0  |  提交时间：2015/11/12 CMOS  dual-metal gate  HfN  integration  replacement gate  PERFORMANCE  TECHNOLOGY   Breakdown characteristics of HfO2 gate dielectrics films under constant current stress 期刊论文 pan tao ti hsueh paochinese journal of semiconductors, 2004 Han, Dedong; Kang, Jinfeng; Wang, Chenggang; Liu, Xiaoyan; Han, Ruqi; Wang, Wei 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/16 Study on electrical characteristics of high-K HfO2 gate dielectric films 期刊论文 guti dianzixue yanjiu yu jinzhanresearch and progress of solid state electronics, 2004 Han, Dedong; Kang, Jinfeng; Liu, Xiaoyan; Han, Ruqi 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/17 Stress induced leakage current and time dependent dielectric breakdown characteristics of ultra-thin HFO2 gate dielectrics 其他 2004-01-01 Yang, Hong; Sa, Ning; Tang, Liang; Han, Ruqi; Yu, Y.H.; Ren, C.; Kang, Jinfeng 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/17 The, characteristics of Ni (Pt) Si/Si Schottky barrier diode with deep trench 其他 2004-01-01 Zhang, LC; Jin, HY; Gao, YZ; Zhang, H; Huang, W; Lu, JZ 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 Schottky barrier diode  NiSi  Ni (Pt) Si  deep trench   TDDB characteristics of ultra-thin HfN/HfO2 gate stack 其他 2004-01-01 Yang, H; Sa, N; Tang, L; Liu, XY; Kang, JF; Han, RQ; Yu, HY; Ren, C; Li, MF; Chan, DSH; Kwong, DL 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13 High performance SOI gate-bulk connected LDMOSFET for RF power amplifier application in short and medium ranae wireless communication 期刊论文 chinese journal of electronics, 2004 Zhang, GY; Sun, X; Tao, Y; Liu, JH; Li, Y; Song, RF; Huang, R; Zhang, X; Wang, YY 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 SOI (silicon on insulator)  gate-bulk connected  LD MOSFET  RF power amplifier   The statistical analysis of substrate current to soft breakdown in ultra-thin gate oxide n-MOSFETs 其他 2004-01-01 Wang, YG; Shi, K; Jia, GS; Xu, MZ; Tan, CH; Duan, XR 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13 substrate current  soft breakdown  ultra-thin gate oxide  Weibull distribution  variable frequency light pumping  LAYERS