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Semiconductor laser device capable of suppressing leakage current in a light emitting and surface and method for manufacturing same 专利
专利号: US20020064200A1, 申请日期: 2002-05-30, 公开日期: 2002-05-30
作者:  OSHIMA, NOBORU;  SAKATA, MASAHIKO;  YOKOTA, MAKOTO
收藏  |  浏览/下载:1/0  |  提交时间:2020/01/18
High-vacuum electron-beam co-evaporation of Si nanocrystals embedded in Al2O3 matrix 期刊论文
APPLIED SURFACE SCIENCE, 2002, 卷号: 191, 期号: 1-4, 页码: 171-175
Wan, Q; Zhang, NL; Xie, XY; Wang, TH; Lin, CL
收藏  |  浏览/下载:5/0  |  提交时间:2012/03/24


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