CORC

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Semiconductor material having si-doped gainp cap layer 专利
专利号: JP1992278522A, 申请日期: 1992-10-05, 公开日期: 1992-10-05
作者:  MAEDA SHIGEO;  TOYAMA OSAMU;  WATABE SHINICHI
收藏  |  浏览/下载:11/0  |  提交时间:2019/12/31
Semiconductor laser and manufacture 专利
专利号: JP1992273493A, 申请日期: 1992-09-29, 公开日期: 1992-09-29
作者:  SUGAO SHIGEO
收藏  |  浏览/下载:1/0  |  提交时间:2020/01/18
MICROSTRUCTURE AND CORROSION BEHAVIOR OF CHROMIUM NITRIDE GROWN BY DYNAMIC ION-BEAM MIXING 期刊论文
Surface & Coatings Technology, 1992, 卷号: 51, 期号: 1-3, 页码: 222-226
Z. L. Chen; S. Patu
收藏  |  浏览/下载:6/0  |  提交时间:2012/04/14
DISLOCATION-STRUCTURE IN A SINGLE-CRYSTAL NICKEL-BASE SUPERALLOY DURING LOW-CYCLE FATIGUE 期刊论文
Metallurgical Transactions a-Physical Metallurgy and Materials Science, 1992, 卷号: 23, 期号: 4, 页码: 1253-1258
J. H. Zhang; Z. Q. Hu; Y. B. Xu; Z. G. Wang
收藏  |  浏览/下载:7/0  |  提交时间:2012/04/14
PERIODIC STRAIN BURST BEHAVIOR OF AL-0.87 MG ALLOY IN CYCLIC CREEP AT INTERMEDIATE TEMPERATURES 期刊论文
Acta Metallurgica Et Materialia, 1992, 卷号: 40, 期号: 7, 页码: 1739-1752
Z. A. Yang; Z. R. Wang; X. B. Hu; Z. G. Wang
收藏  |  浏览/下载:18/0  |  提交时间:2012/04/14
Preliminary-results of gaas single-crystal growth under high gravity conditions 期刊论文
Journal of Crystal Growth, 1992, 卷号: 119, 期号: 1-2, 页码: 74-78
作者:  Zhong XR;  Zhou BJ;  Yan QM;  Cao FN;  Li CJ
收藏  |  浏览/下载:742/44  |  提交时间:2009/08/03
PHOTOBEHAVIOR OF PARAMAGNETIC ANION ANTISITES IN PLASTICALLY DEFORMED GAAS 期刊论文
JOURNAL OF APPLIED PHYSICS, 1992, 卷号: 72, 期号: 4, 页码: 1323-1326
BENCHIGUER, T; MARI, B; SCHWAB, C; WU, J; WANG, GY
收藏  |  浏览/下载:103/0  |  提交时间:2012/03/25
DELINEATION OF DEFECTS IN SIMOX STRUCTURES USING A CHEMICAL ETCHING TECHNIQUE 期刊论文
vacuum, 1992, 卷号: 43, 期号: 4, 页码: 297-299
GILES LF; NEJIM A; HEMMENT PLF; FAN TW
收藏  |  浏览/下载:5/0  |  提交时间:2010/11/15
PRELIMINARY-RESULTS OF GAAS SINGLE-CRYSTAL GROWTH UNDER HIGH GRAVITY CONDITIONS 期刊论文
journal of crystal growth, 1992, 卷号: 119, 期号: 0, 页码: 74-78
ZHONG XR; ZHOU BJ; YAN QM; CAO FN; LI CJ; LIN LY; MA WJ; ZHENG Y; TAO F; XUE ML
收藏  |  浏览/下载:29/0  |  提交时间:2010/11/15


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