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High output semiconductor laser 专利
专利号: JP1991187284A, 申请日期: 1991-08-15, 公开日期: 1991-08-15
作者:  BESSHO YASUYUKI;  TABUCHI NORIO
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ONE-ELECTRON EXCITATIONS AND SHAKE UP SATELLITES IN CU K-EDGE X-RAY ABSORPTION NEAR EDGE STRUCTURE (XANES) OF LA2CUO4 BY FULL MULTIPLE-SCATTERING ANALYSIS IN REAL SPACE 期刊论文
PHYSICA C, 1991, 卷号: 175, 期号: 3-4, 页码: 369
LI, CX; POMPA, M; CASTELLANO, AC; DELLALONGA, S; BIANCONI, A
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